PDTA144ET,215

Resistor - Emitter Base (R2):	47 kOhms
Base Part Number:	PDTA144
Supplier Device Package:	TO-236AB (SOT23)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	250mW
Current - Collector Cutoff (Max):	1µA
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 5V
Series:	--
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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PDTA144ET,215 is one of the most popularly used single, pre-biased transistors for use in the electronic industry. The device is a NPN silicon transistor with a common base configuration and is typically used for switching and amplification purposes. The device is capable of handling a maximum of 80mA and has an operating temperature range from -55C to +125C. This device has an improved principal of operation compared to its counterparts in the market. It uses dual collector terminal configurations that enable it to meet the requirements of high-frequency applications. This is advantageous in comparison to its single terminal counterparts, which have inferior high-frequency characteristics. This characteristic gives it lower noise and higher speed operation compared to many other types of transistors. The device also has a distinctive physical configuration, which makes it ideal for use in applications where space conservation is important. It has two symmetrical leads and is easy to use in printed circuit boards. The device has a structure that enables it to reduce the parasitic capacitance, thus allowing for higher gain and wider bandwidth. The PDTA144ET,215 has a characteristic enabling it to be used in both low-voltage and low-current applications. It is particularly useful when used in applications where low voltage and low current must be maintained simultaneously. This is a feature that is not available in many other transistors, so the device is quite versatile in its applications. In its applications, the PDTA144ET,215 can operate in several modes. In amplification mode, the device can be used to create voltage gain. As a switch, the device can be used to turn on and off current in various circuits. It can also be used to regulate the voltage of the power source or the DC current from a power source. The working principle of the device is relatively straightforward. When the base is held at a suitable bias, an electric current will flow from the collector to the emitter, thereby allowing for the desired voltage or current amplification or switching action. The operation of the device is dependent upon the current and voltage applied to the base terminal. The PDTA144ET,215 is a simple and valuable transistor for a variety of electronic applications. It is well-suited for applications that require low signal gains, such as smart phone and cell phone applications, power management andlighting, as well as automotive, medical, and other consumer electronics applications. The device is designed to provide high-speed operation, low noise operation and minimized parasitics, all at a small size, making it a popular choice among engineers. As a high-performance transistor, it is capable of operating at temperatures up to 125C, making it suitable for an array of industrial applications. It also has a high input impedance and low noise characteristics, making it a very advantageous choice in applications that require high-grade performance. In summary, the PDTA144ET,215 is a versatile and reliable single, pre-biased transistor for use in a wide range of electronic applications. It provides excellent speed, low noise, high input impedance and minimal parasitics. Applications requiring low signal gains, such as smart phone and cell phone applications, power management and lighting, as well as automotive, medical and consumer electronics applications, benefit from the use of this device. It is well-suited for applications where high-efficiency and high-performance are necessary.

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