PDTA123YT,215 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1979-2-ND |
Manufacturer Part#: |
PDTA123YT,215 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 250MW TO236AB |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTA123YT,215 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.01990 |
6000 +: | $ 0.01796 |
15000 +: | $ 0.01561 |
30000 +: | $ 0.01405 |
75000 +: | $ 0.01249 |
150000 +: | $ 0.01041 |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | PDTA123 |
Supplier Device Package: | TO-236AB (SOT23) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Current - Collector Cutoff (Max): | 1µA |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 5V |
Series: | -- |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Let\'s begin by taking a look at the PDTA123YT,215 transistor. This particular transistor is classified as a single, pre-biased bipolar junction transistor (BJT). This type of transistor is an electronic component that is quite common and is used in a range of applications and circuits.
A BJT is composed of three layers of semiconductor materials, known as the base, collector, and emitter. This type of transistor offers slightly greater performance compared to other BJTs, due in part to its pre-biased design. It’s capable of handling higher current than its counterparts and has slightly less leakage. As a result, it can be used in a number of applications, including signal processing, audio amplification, switching, and motor driving.
The PDTA123YT215 has a few distinct working principles. Firstly, it works by allowing current to flow through the base-emitter junction, via the PN junction between the base and emitter. This increases the voltage between the emitter and base, which raises the base current and decreases the emitter current. The resulting difference in current then allows current to flow between the collector and emitter.
This process, known as BJT gain, occurs when electrons move from one side to the other in the emitter. This can be controlled by the base current, allowing a current control amplifier to amplify small signals. Additionally, the PDTA123YT215 can be used for switching and as a buffer amplifier, as well as for selective signal editing or signal routing.
The basic working principle of this type of transistor is quite simple, but its performance depends heavily on the components used in its construction, such as the electrons used to transfer charge through the PN junction.
The PDTA123YT215 is a good example of a pre-biased BJT, with a slightly higher performance compared to other BJTs, making it a good choice for many applications. It’s useful in a range of applications, including signal processing, audio amplification, switching, and motor driving. The flexibility of this transistor makes it an attractive choice for many designers, as it can be used in a range of applications.
The specific data is subject to PDF, and the above content is for reference
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