PDTA114ES,126 Allicdata Electronics
Allicdata Part #:

PDTA114ES,126-ND

Manufacturer Part#:

PDTA114ES,126

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS PNP 500MW TO92-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA114ES,126 datasheetPDTA114ES,126 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 500mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: PDTA114
Description

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The PDTA114ES,126 is a type of pre-biased single bipolar junction transistor (BJT). This component is commonly used as a switching device in various applications and is known for its excellent precision and reliability. It has a maximum operating temperature of 125°C and its maximum collector-emitter voltage is 75V.

The PDTA114ES,126 is a pre-biased single bipolar junction transistor, which means that it contains two diodes that are already biased and ready to be used in an electronic circuit. This pre-bias allows the component to operate at a very low current, making it ideal for applications where low power consumption is needed. It also offers excellent performance in high-temperature conditions since its collector-emitter voltage is less affected by the temperature.

The working principle of the PDTA114ES,126 is not overly complex. The device is simply a series of semiconductor elements arranged in a lattice-like pattern. This device has a base, an emitter and a collector which are connected together through a series of structural connections. A small current applied to the base of the component causes the conductor that connects the base and collector to become more conductive and as a result, electricity is conducted from the collector to the emitter. This current is then amplified, allowing for it to be used for a variety of applications.

The PDTA114ES,126 is a very useful component in many different fields. It can be used in automotive applications to turn an electrical current on or off, in home automation systems to control the speed of a motor, and in electronic toys as a switch. It is also often used as a switch in medical equipment and many other types of electronic devices.

In summary, the PDTA114ES,126 is a pre-biased single bipolar junction transistor (BJT) that is used for switching applications in a variety of industries. It is known for its excellent performance in high-temperature situations and its ability to operate at low current levels. Its working principle is based on a lattice-like arrangement of semiconductor materials and a current being applied to its base to control the flow of electricity from the collector to the emitter. This component is found in many different fields from automotive applications to home automation systems.

The specific data is subject to PDF, and the above content is for reference

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