PDTA144EK,115 Allicdata Electronics
Allicdata Part #:

PDTA144EK,115-ND

Manufacturer Part#:

PDTA144EK,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS PNP 250MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA144EK,115 datasheetPDTA144EK,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Base Part Number: PDTA144
Description

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The PDTA144EK 115 is a single, pre-biased bipolar junction transistor (BJT) suited for a variety of applications. This device is a versatile semi-conductor that can be used for numerous applications in fields such as automotive, consumer electronic equipment, audio power, controlled switching, and industrial equipment. The device is equipped with current-limiting and temperature protection features, making it well-suited for linear applications.

The PDTA144EK 115 is a single-junction NPN transistor that operates with a collector-emitter voltage of 115V and a collector current of 6A. The device features a maximum fan-out of 8, a minimum hFE of 200, and a maximum hFE of 1500. It has a maximum breakdown voltage of 250V, a maximum operating temperature of 175°C, and a maximum power dissipation of 5W. The transistor also has a maximum rise time of 100ns and is rated for a minimum duty cycle of 2%.

The PDTA144EK 115 is commonly used in automotive applications such as igniters, relays, and solenoids. It is also well-suited for use in consumer electronics, particularly for audio power amplifiers in video game consoles and home theater systems. Additionally, it can be utilized for power switching in HVAC systems and industrial equipment.

The working principle of the PDTA144EK 115 transistor is based on the PN junction diode. When the PDTA144EK 115 is used in an active switching circuit, voltage is applied across the emitter-base junction in order to inject minority carriers into the base. This causes a decrease in the resistance between the collector and emitter, allowing current to be amplified. The amount of current is controlled by the applied voltage, as more current is injected into the base as the voltage increases. The voltage across the collector-emitter inverse is then amplified, allowing the transistor to switch and control larger amounts of electrical current.

In summary, the PDTA144EK 115 is a versatile single, pre-biased bipolar junction transistor that is well-suited for a variety of applications. It has a maximum breakdown voltage of 250V, a collector-emitter voltage of 115V, and a collector current of 6A. The device is commonly used in automotive applications, consumer electronic equipment, audio power systems, controlled switching, and industrial equipment. The working principle of the PDTA144EK 115 is based on the PN junction diode, allowing it to control and switch larger amounts of electrical current, providing users with an all-in-one solution.

The specific data is subject to PDF, and the above content is for reference

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