PDTA124XT,215 Allicdata Electronics

PDTA124XT,215 Discrete Semiconductor Products

Allicdata Part #:

1727-1695-2-ND

Manufacturer Part#:

PDTA124XT,215

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 250MW TO236AB
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA124XT,215 datasheetPDTA124XT,215 Datasheet/PDF
Quantity: 3000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.01990
6000 +: $ 0.01796
15000 +: $ 0.01561
30000 +: $ 0.01405
75000 +: $ 0.01249
150000 +: $ 0.01041
Stock 3000Can Ship Immediately
$ 0.02
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Base Part Number: PDTA124
Supplier Device Package: TO-236AB (SOT23)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 250mW
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Series: --
Resistor - Base (R1): 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transistors - Bipolar (BJT) - Single, Pre-Biased

PDTA124XT, 215 transistors are classified as pre-biased single bipolar junction transistors (BJT). Pre-biased transistors are devices whose base-emitter voltage is preset at a given voltage and whose base current is preset at a given current during manufacture. The PDTA124XT,215 is designed to operate optimally at a preset voltage of 6 V and a preset current of 25mA. Transistors can be used in a wide variety of applications.

Applications of PDTA124XT,215 Transistors

A wide variety of applications can utilize the PDTA124XT, 215 transistor. These applications include:

  • Power switching
  • Low-noise amplification
  • Signal amplification
  • Signal detection
  • Radio frequency (RF) amplifiers
  • Pulse motors
  • Pulse generators

Working Principle of PDTA124XT,215 Transistors

The working principle of the PDTA124XT, 215 transistors is based on the laws of electricity. When a voltage is applied between the base and the emitter of a BJT, current flows through the device, creating an amplified signal. The amount of current flowing through the device is determined by the size of the base-emitter voltage used to drive the device. This voltage is preset to 6 V for the PDTA124XT, 215, making it highly efficient and reliable in terms of signal amplification and power switching applications.

When a voltage is applied to the emitter, electrons are attracted to the base. This flow of electrons creates a “base current” which is amplified as it flows through the BJT. The current then flows through the collector and is further amplified as it is routed to the output. The amount of current that is amplified depends on the size of the base-emitter voltage driving the device. This is why the PDTA124XT, 215 is designed to operate at a preset voltage of 6 V and a preset current of 25mA; this ensures that the device is capable of providing maximum signal amplification and power switching performance.

The PDTA124XT, 215 transistor is an excellent choice for both signal amplification and power switching applications. The device is highly efficient and reliable, making it ideal for use in a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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