PDTA124XT,215 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1695-2-ND |
Manufacturer Part#: |
PDTA124XT,215 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 250MW TO236AB |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTA124XT,215 Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.01990 |
6000 +: | $ 0.01796 |
15000 +: | $ 0.01561 |
30000 +: | $ 0.01405 |
75000 +: | $ 0.01249 |
150000 +: | $ 0.01041 |
Resistor - Emitter Base (R2): | 47 kOhms |
Base Part Number: | PDTA124 |
Supplier Device Package: | TO-236AB (SOT23) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 5V |
Series: | -- |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTA124XT, 215 transistors are classified as pre-biased single bipolar junction transistors (BJT). Pre-biased transistors are devices whose base-emitter voltage is preset at a given voltage and whose base current is preset at a given current during manufacture. The PDTA124XT,215 is designed to operate optimally at a preset voltage of 6 V and a preset current of 25mA. Transistors can be used in a wide variety of applications.
Applications of PDTA124XT,215 Transistors
A wide variety of applications can utilize the PDTA124XT, 215 transistor. These applications include:
- Power switching
- Low-noise amplification
- Signal amplification
- Signal detection
- Radio frequency (RF) amplifiers
- Pulse motors
- Pulse generators
Working Principle of PDTA124XT,215 Transistors
The working principle of the PDTA124XT, 215 transistors is based on the laws of electricity. When a voltage is applied between the base and the emitter of a BJT, current flows through the device, creating an amplified signal. The amount of current flowing through the device is determined by the size of the base-emitter voltage used to drive the device. This voltage is preset to 6 V for the PDTA124XT, 215, making it highly efficient and reliable in terms of signal amplification and power switching applications.
When a voltage is applied to the emitter, electrons are attracted to the base. This flow of electrons creates a “base current” which is amplified as it flows through the BJT. The current then flows through the collector and is further amplified as it is routed to the output. The amount of current that is amplified depends on the size of the base-emitter voltage driving the device. This is why the PDTA124XT, 215 is designed to operate at a preset voltage of 6 V and a preset current of 25mA; this ensures that the device is capable of providing maximum signal amplification and power switching performance.
The PDTA124XT, 215 transistor is an excellent choice for both signal amplification and power switching applications. The device is highly efficient and reliable, making it ideal for use in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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