Allicdata Part #: | 1727-1692-1-ND |
Manufacturer Part#: |
PDTA123JT,215 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 250MW TO236AB |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTA123JT,215 Datasheet/PDF |
Quantity: | 40 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 0.11340 |
10 +: | $ 0.10584 |
100 +: | $ 0.05746 |
500 +: | $ 0.03537 |
1000 +: | $ 0.02411 |
Resistor - Base (R1): | 2.2 kOhms |
Supplier Device Package: | TO-236AB (SOT23) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 250µA, 5mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 5V |
Resistor - Emitter Base (R2): | 47 kOhms |
Series: | -- |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Cut Tape (CT) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PDTA123JT,215 semiconductor device is classified as a single, pre-biased bipolar junction transistor (BJT). A BJT consists of three layers of semiconductor material, each layer containing one type of semiconductor material. The three layers are known as the emitter, the base, and the collector.
The main purpose of pre-biasing the PDTA123JT,215 is to reduce the amount of voltage that it needs to properly operate. This type of transistor is significant because it uses a base emitter bias circuit powered by a constant current source. Pre-biasing allows the device to operate at lower supply voltages while managing a high output voltage swing. This is advantageous as it helps to reduce power consumption.
The working principle of a PDTA123JT,215 BJT is similar to any other BJT. When a voltage is applied to the base of the transistor, the electric field created by the applied voltage causes a flow of electrons from the emitter to the collector. This electron flow, or current, is known as the collector-emitter current. The strength of this current is dependent on the base current. If the base current is increased, the collector-emitter current will also increase.
The PDTA123JT,215 can have a number of applications. It is commonly used in amplifier circuits as it allows the user to control the level of amplification by varying the base current. Additionally, it is useful in switching applications as it can be used to control the flow of current in a circuit. Another application is the use of this transistor in the control of electrical signals. By varying the amount of base current, a signal’s shape, amplitude, and frequency can be altered.
The PDTA123JT,215 single, pre-biased BJT is a popular choice for many electronics applications. By using a pre-biased BJT, users can reduce the amount of voltage required to power the device while also allowing for control of the output voltage swing. Additionally, this device can be used in amplifier and switching circuits, as well as for signal control applications.
The specific data is subject to PDF, and the above content is for reference
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