Allicdata Part #: | PHB18NQ10T,118-ND |
Manufacturer Part#: |
PHB18NQ10T,118 |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 18A D2PAK |
More Detail: | N-Channel 100V 18A (Tc) 79W (Tc) Surface Mount D2P... |
DataSheet: | PHB18NQ10T,118 Datasheet/PDF |
Quantity: | 1000 |
4800 +: | $ 0.22417 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 633pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 79W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PHB18NQ10T,118 can be classified as one of many transistors, and specifically FETs and more specifically, single MOSFETs. A transistor is a semiconductor device that can act as a switch or an amplifier. The primary building blocks of electronic devices, transistors are relied on for many use cases. FETs, or field effect transistors, are a type of transistor that relies on a field effected, or electric field, to control their conductivity. FETs are further divided into two types: Junction FETs, and Metal Oxide FETs. MOSFETs, or metal oxide semiconductor FETs, are transistors that use a metal oxide to add some insulation to the channel between the source and drain, hence the “oxide” in MOSFET. MOSFETs also use a gate to separate the channel. Single MOSFETs are specific transistors that have one channel and, depending on the device, either n-type or p-type channels, where n-type channels are transistors that conduct electrons and p-type channels are those that conduct holes.
This particular PHB18NQ10T,118 single MOSFET is a Logic Level transistor with an listed RDS on value of 4.916 mΩ and an operating temperature range of -55°C to 175°C. This makes them well suited for high-voltage and high-current applications that require midsize power, such as automotive and industrial applications. It is also very suitable for use in power supplies, motion control, or other logic-level applications. The current flow through the PHB18NQ10T,118 depends on the voltage that is applied to the gate terminal, allowing the transistor to act like a switch. The transistor has three connections, the gate, source, and drain. When a voltage source is applied to the gate, it creates an electric field in the gate region and across the channel. The amount of electric field can control the flow of current from the source to the drain. The transistor can then act as either an on-off switch or as an amplifier.
The PHB18NQ10T,118 single MOSFET can also be used for dimming applications, like in modern LED lighting. By controlling the gate voltage, the amount of current that flows through the device can be varied, thus controlling the brightness of the LEDs. Single MOSFETs are overall very versatile and are not limited to just dimming applications, they can be used to control power with high efficiency and reliability, or they can be used in high-current switching applications. Overall, the PHB18NQ10T,118 single MOSFET is highly reliable, can handle a broad temperature range, and can be used for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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