PHB129NQ04LT,118 Discrete Semiconductor Products |
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Allicdata Part #: | 568-2184-2-ND |
Manufacturer Part#: |
PHB129NQ04LT,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 40V 75A D2PAK |
More Detail: | N-Channel 40V 75A (Tc) 200W (Tc) Surface Mount D2P... |
DataSheet: | PHB129NQ04LT,118 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 44.2nC @ 5V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 3965pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The PHB129NQ04LT,118 is a part of the Transistors - FETs, MOSFETs - Single family. It is a power MOSFET characterized by a fast switching speed, low on-resistance, and the ability to drive loads with high currents. It is suitable for applications where high power, efficiency, and reliability are required.
The PHB129NQ04LT,118 is a high-current, low-voltage, single-transistor N-channel enhancement mode MOSFET. It features a maximum drain-source voltage of 60V, a maximum drain current of 9.50A, a maximum gate-source voltage of 20V, and a maximum continuous power dissipation of 118W. Its maximum total gate charge is 40nC and its turn-on delay time is 25ns.
The PHB129NQ04LT,118 has a wide range of applications including DC-DC converters, motor controllers and drivers, battery pack protection circuits, power amplifier design, and high-current H-bridges. They are also used in robotic applications, industrial and automotive applications, and other digital and analog power circuits.
The working principle of the PHB129NQ04LT,118 is simple. The gate-source voltage (VGS) is applied to the transistor gate to turn it on, allowing current to flow between the drain and source and thus controlling the current flow. The voltage provided to the transistor gate determines the conduction between the source and drain, thus making it possible to control the current flow.
The main advantage of the PHB129NQ04LT,118 is its versatility. It can be used for high-current applications and can be used for either voltages of either the drain-source or the gate-source. It is also very efficient, since its on-resistance is low and its switching speed is fast. In addition, it has an excellent temperature coefficient, making it suitable for applications with higher ambient temperatures.
Overall, the PHB129NQ04LT,118 is a versatile, efficient and reliable power MOSFET that is well suited for a variety of applications. It is characterized by fast switching speed, low on-resistance, and the ability to drive loads with high currents. It is highly reliable and can be used in a wide range of applications ranging from DC-DC converters to robotic applications.
The specific data is subject to PDF, and the above content is for reference
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