PHB101NQ04T,118 Allicdata Electronics

PHB101NQ04T,118 Discrete Semiconductor Products

Allicdata Part #:

568-2182-2-ND

Manufacturer Part#:

PHB101NQ04T,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 40V 75A D2PAK
More Detail: N-Channel 40V 75A (Tc) 157W (Tc) Surface Mount D2P...
DataSheet: PHB101NQ04T,118 datasheetPHB101NQ04T,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V
FET Feature: --
Power Dissipation (Max): 157W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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The PHB101NQ04T,118 is a field effect transistor (FET) that is part of the MOSFET family. MOSFETs are unipolar transistors, which means that electronic current is carried through the devices by one type of charge carrier. In this case, it is electrons, which provide the source of the driving force.

The PHB101NQ04T,118 is a single MOSFET, which is a FET that has one single channel. The single channel gives the PHB101NQ04T,118 its low characteristic as well as its high input impedance and high switching speed.

The PHB101NQ04T,118 is commonly used in power management applications such as DC-DC converters and AC-DC converters. Its low on-state resistance and high efficiency in power conversion make it an ideal choice for applications that demand a high level of efficiency.

The PHB101NQ04T,118 works by using its single channel to modulate the gate-source voltage. When the voltage reaches a certain level, the device will enter a state of conduction, allowing current to flow between the drain and the source.

In order to modulate the gate-source voltage, the PHB101NQ04T,118 relies on a biased voltage applied to the gate. This bias voltage can be either positive or negative and is proportional to the amount of current that the device will allow to pass through. When the gate-source voltage reaches its threshold voltage, the device will enter its saturation region, which is when the transistor operates at its highest efficiency.

The PHB101NQ04T,118 is also used in applications that require switching speed, such as logic devices and high-frequency applications. Since the device can switch between its two states very quickly, it makes it an ideal choice for applications that require fast switching speeds.

In conclusion, the PHB101NQ04T,118 is a single MOSFET that is used in a wide range of applications. It has a low characteristic, a high input impedance, and a high switching speed. Its ability to modulate the gate-source voltage in order to achieve its high efficiency makes it an ideal choice for applications that demand high efficiency or require a fast switching speed.

The specific data is subject to PDF, and the above content is for reference

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