PHB101NQ04T,118 Discrete Semiconductor Products |
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Allicdata Part #: | 568-2182-2-ND |
Manufacturer Part#: |
PHB101NQ04T,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 40V 75A D2PAK |
More Detail: | N-Channel 40V 75A (Tc) 157W (Tc) Surface Mount D2P... |
DataSheet: | PHB101NQ04T,118 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 36.6nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2020pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 157W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The PHB101NQ04T,118 is a field effect transistor (FET) that is part of the MOSFET family. MOSFETs are unipolar transistors, which means that electronic current is carried through the devices by one type of charge carrier. In this case, it is electrons, which provide the source of the driving force.
The PHB101NQ04T,118 is a single MOSFET, which is a FET that has one single channel. The single channel gives the PHB101NQ04T,118 its low characteristic as well as its high input impedance and high switching speed.
The PHB101NQ04T,118 is commonly used in power management applications such as DC-DC converters and AC-DC converters. Its low on-state resistance and high efficiency in power conversion make it an ideal choice for applications that demand a high level of efficiency.
The PHB101NQ04T,118 works by using its single channel to modulate the gate-source voltage. When the voltage reaches a certain level, the device will enter a state of conduction, allowing current to flow between the drain and the source.
In order to modulate the gate-source voltage, the PHB101NQ04T,118 relies on a biased voltage applied to the gate. This bias voltage can be either positive or negative and is proportional to the amount of current that the device will allow to pass through. When the gate-source voltage reaches its threshold voltage, the device will enter its saturation region, which is when the transistor operates at its highest efficiency.
The PHB101NQ04T,118 is also used in applications that require switching speed, such as logic devices and high-frequency applications. Since the device can switch between its two states very quickly, it makes it an ideal choice for applications that require fast switching speeds.
In conclusion, the PHB101NQ04T,118 is a single MOSFET that is used in a wide range of applications. It has a low characteristic, a high input impedance, and a high switching speed. Its ability to modulate the gate-source voltage in order to achieve its high efficiency makes it an ideal choice for applications that demand high efficiency or require a fast switching speed.
The specific data is subject to PDF, and the above content is for reference
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