PHB110NQ06LT,118 Discrete Semiconductor Products

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PHB110NQ06LT,118 Application field and Working Principle

The PHB110NQ06LT,118 is a power MOSFET with high efficiency and low on-state resistance. Designed to operate over a wide-range of voltage and temperature, this device features excellent performance in a compact package.

Applications

The PHB110NQ06LT,118 is suitable for use in a wide range of applications, including power switching, DC-DC converters, and DC-AC inverters. It is ideal for applications that require high efficiency and low power dissipation, such as automotive, consumer electronics, and industrial applications.

Working Principle

The PHB110NQ06LT,118 is a power MOSFET based on the lateral double-diffused metal-oxide-semiconductor (LDMOS) technology. It consists of two silicon layers one above and one below the gate. The upper layer consists of P+ buried layers, source, and gate regions, while the lower layer consists of N+ buried layers and a drain region.

The device operates in three modes: Enhancement mode, depletion mode, and linear mode. In the enhancement mode, an increase in the gate voltage repels electron current from the gate which causes a current to flow through it. In the depletion mode, a decrease in the gate voltage promotes charge carriers from the source towards the gate, thus creating a current. Finally, in the linear mode, the device operates like a resistor, where the current flow is proportional to the voltage difference between the source and the drain.

The PHB110NQ06LT,118 has a breakdown voltage of 600V and a maximum drain-source voltage of 400V. It also features a gate-source threshold voltage of -2V and a drain-source on-state resistance of 0.036 Ω. The device is available in a TO-252AA plastic package and is rated for operation at temperatures up to 175°C.

Conclusion

The PHB110NQ06LT,118 is a power MOSFET with high efficiency and low on-state resistance. It is suitable for use in a wide range of applications, such as power switching, DC-DC converters, and DC-AC inverters. The device has a breakdown voltage of 600V, a gate-source threshold voltage of -2V, and a drain-source on-state resistance of 0.036Ω. It is available in a TO-252AA plastic package and is rated for operation at temperatures up to 175°C.

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