PHB174NQ04LT,118 Discrete Semiconductor Products |
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Allicdata Part #: | 568-2187-2-ND |
Manufacturer Part#: |
PHB174NQ04LT,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 40V 75A D2PAK |
More Detail: | N-Channel 40V 75A (Tc) 250W (Tc) Surface Mount D2P... |
DataSheet: | PHB174NQ04LT,118 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 5V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 5345pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 250W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Transistors - FETs, MOSFETs - Single
PHB174NQ04LT,118 is a single field-effect transistor (FET) subfamily of a Multi-Gate MOSFET family and is suitable for a wide range of desktop, laptop and server applications. This transistor is implemented in a small footprint, thereby allowing full utilization of PCB space. It also has low gate charge and extremely low on-resistance, which makes it ideal for battery-powered systems operations.
The PHB174NQ04LT,118 is based on a P-Channel Depletion-Mode MOSFET and creates a power switch by controlling the current flow from the drain to the source. When an electrical signal is applied to the gate terminal, an electric field is generated which changes the resistance between the source and the drain. The gate voltage controls the extent of the depletion region’s width, which in turn determines the resistance. Depending on the gate voltage, the depletion region width can be adjusted, thus controlling the drain-source current.
The PHB174NQ04LT,118 features a low resistive drain-source on-state, a low on-state gate charge, low reverse body diode switching losses and ESD performance up to +8KV contact discharge. Additionally, it offers PWM input voltage tolerance that range from -10V to +14V. These features makes it suitable for a range of high-efficiency focusing scenarios.
The PHB174NQ04LT,118’s applications include low-side and high-side switching, DC/DC converters, current-sense amplifiers, motor drivers, power transistor switches, power management, and power amplifiers. Thanks to its various features, such as extremely low on-resistance and low gate charge, this transistor is an excellent choice for fast switching applications that demand a high level of efficiency. It is also suitable for other applications where current detection, high-frequency operation, or power supply rail adjustments are necessary.
In conclusion, the PHB174NQ04LT,118 is a single field-effect transistor subfamily of multi-gate MOSFETs, suited for a range of desktop, laptop and server applications. With low gate charge and extremely low on-resistance, it is ideal for battery-powered systems operations. It is highly efficient for fast switching applications and its features make it suitable for current detection, high-frequency operation, and power supply rail adjustments.
The specific data is subject to PDF, and the above content is for reference
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