PMBT2369,215 Allicdata Electronics
Allicdata Part #:

1727-2957-2-ND

Manufacturer Part#:

PMBT2369,215

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 15V 0.2A SOT23
More Detail: Bipolar (BJT) Transistor NPN 15V 200mA 500MHz 250m...
DataSheet: PMBT2369,215 datasheetPMBT2369,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02328
6000 +: $ 0.02100
15000 +: $ 0.01826
30000 +: $ 0.01643
75000 +: $ 0.01460
150000 +: $ 0.01217
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: 250mW
Frequency - Transition: 500MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: PMBT2369
Description

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PMBT2369,215 Application Field and Working Principle

A PMBT2369,215 transistor is an n-p-n bipolar junction transistor (BJT) in which the n-type material is made of gallium arsenide and the p-type material is made of either gallium arsenide or gallium phosphide. It is a general-purpose device and has a wide range of applications in analog electronics.

Generally speaking, the PMBT2369,215 transistor is used as an amplifier, radio frequency (RF) mixer, current regulator, voltage regulator, switch and many other applications. Depending on the type of transistor, it could be used as a single amplifier, a cascaded amplifier, a class A, class AB, class B or class C amplifier. In addition, it could be used as an oscillator or as part of an amplifier-mixer chain.

The operating principle of this device is based on the popular principle of operation of an NPN type bipolar junction transistor. This is because it has two p-n junctions connected together in a special way. When a voltage is applied between the two loops, the current flow between them is controlled. This is because there is an induced electric field that increases the electron flow between the p-type and n-type materials.

The PMBT2369,215 transistor has a gain, which is a measure of the change in collector current when the base-emitter voltage is varied. The gain is equal to the ratio of collector current to base current i.e. current gain (hFE). Additionally, it also provides a base-emitter breakdown voltage, which is the minimum voltage across the base-emitter junction which would result in the transistor entering the breakdown region. In addition, it also has a muscle figure of merit (MFM) which describes the transconductance of the device, that is, the ratio of collector current to base-emitter voltage. This figure of merit is an important parameter for selecting the device.

In conclusion, the PMBT2369,215 transistor is a general-purpose device and is suitable for a wide range of applications in analog electronics. Its operating principle is based on the familiar principle of NPN bipolar junction transistor operation. It has a relatively high gain, a base-emitter breakdown voltage and a muscle figure of merit. These characteristics makes this particular device well-suited for many analog applications.

The specific data is subject to PDF, and the above content is for reference

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