PMBTA14,215

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	20000 @ 100mA, 5V
Power - Max:	250mW
Frequency - Transition:	125MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	PMBTA14

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Introduction

The PMBTA14,215 is a single bipolar junction transistor (BJT) produced by various manufacturers worldwide. This device is often used for discrete power transistors in amplifiers, switching circuits, and other high-power applications. It is a general-purpose device and has many features, such as its base-to-emitter drop voltage and its collector-to-emitter saturation voltage that make it suitable for various applications. This article will discuss the applications and the working principle of the PMBTA14,215.

Applications

The PMBTA14, 215 has a wide variety of applications, including power switching, voltage regulator, and inverter circuits. In power switching applications, the PMBTA14,215 transistor is used in power circuit designs to switch high-current loads on and off. In a voltage regulator circuit, the PMBTA14,215 is used to provide a stable voltage output to the load. In an inverter circuit, the PMBTA14,215 transistor is used to drive the switching transistors in order to convert the DC power to AC power. The PMBTA14,215 transistor is also used in amplifiers and radio-frequency (RF) circuits for amplification, modulation, and detection of signals.

Working Principle

The PMBTA14,215 is a single bipolar junction transistor that consists of three layers of semiconductor material with alternating P- and N-type regions. The PNP type PMBTA14,215 has an N-type emitter region, a P-type base region, and a N-type collector region. When a small current flows into the emitter, it results in a much larger current flow out of the collector, and vice versa. This phenomenon is known as current gain and is the basis for the transistor working.When the input signal is applied to the base of the PMBTA14,215, the voltage is divided between the base-emitter junction and the base-collector junction. This division is known as the base-to-emitter drop voltage. The collector-to-emitter saturation voltage varies from approximately 0.5V to 0.9V, depending on the amount of current applied to the base.

Conclusion

The PMBTA14,215 is a single bipolar junction transistor (BJT) used in many applications, ranging from power switching and voltage regulation to amplifiers and radio-frequency (RF) circuits. The main feature of this device is its base-to-emitter drop voltage, which result in greater current gain and the collector-to-emitter saturation voltage, which varies depending on the amount of current applied to the base. The applications and working principle of the PMBTA14,215 have been described in this article.

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