Allicdata Part #: | PMF250XNEAX-ND |
Manufacturer Part#: |
PMF250XNEAX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CHANNEL 30V 900MA SC70 |
More Detail: | N-Channel 30V 900mA (Ta) 342mW (Ta) Surface Mount ... |
DataSheet: | PMF250XNEAX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.25V @ 250µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 342mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 81pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 1.65nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 254 mOhm @ 900mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 900mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PMF250XNEAX is a power MOSFET of the Enhancement Mode type and is housed in a plastic PowerDPAK (TO-252AA) package with exposed drain. It is generally used in load switching, motor control and other applications involved in power conversion. It offers fast switching speeds, low on-state resistance, and low gate drive power requirements.
The PMF250XNEAX basically consists of a single MOSFET which is optimized to stop power RDSON. This leads to low power dissipation in the device with more efficient operation. The PMF250XNEAX also offers a wide drain-source voltage range up to 500V which can suppress up to 11A of output current.
In terms of power efficiency, it operates well over junction temperatures ranging from -55°C up to 175°C which helps to maintain performance without overheating. It has an 80V gate threshold voltage which ensures reliable and consistent gate drive voltage.
The working principle of the device lies in the fact that it has an additional gate terminal as compared to a standard BJT. The gate terminal allows the flow of electrons from the source to the drain of the MOSFET. This results in the channel between the source and the drain, which provides resistance to the flow of electrons and by this causes the field effect. When the gate voltage of the MOSFET is lowered, an inversion layer which allows the conduction of electrons is formed between the source and the drain.
Since the PMF250XNEAX is a power MOSFET it is capable of withstanding higher power levels and it’s ideal for applications such as load switching, motor control, DC to DC converters and various other applications involved in power conversion. It can also be used in audio power amplifiers and voltage level shifting.
PMF250XNEAX devices can be used in applications such as high and low side switching, medium and low frequency power converters, motor control, and high-current load control. These devices are designed for power efficiency, low power dissipation and long lifetime due to their low on-state resistance and thermal performance.
In conclusion, PMF250XNEAX is a power MOSFET from STMicroelectronics that is housed in a plastic PowerDPAK (TO-252AA) package with exposed drain. It is used in load switching, motor control and other applications involved in power conversion, and offers fast switching speeds, low on-state resistance, and low gate drive power requirements. PMF250XNEAX devices are designed for power efficiency, low power dissipation and long lifetime due to their low on-state resistance and thermal performance.
The specific data is subject to PDF, and the above content is for reference
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