Allicdata Part #: | 1727-2693-2-ND |
Manufacturer Part#: |
PMF250XNEX |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CHANNEL 30V 1A SC70 |
More Detail: | N-Channel 30V 1A (Ta) 342mW (Ta) Surface Mount SC-... |
DataSheet: | PMF250XNEX Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04985 |
Vgs(th) (Max) @ Id: | 1.25V @ 250µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 342mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 81pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 1.65nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 254 mOhm @ 900mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction to PMF250XNEX
The PMF250XNEX is a power metal-oxide-semiconductor field-effect transistor (MOSFET). Originally developed by Philips Semiconductor, this MOSFET is designed to be faster and more efficient than traditional FETs. While the basic structure and principle of operation remain the same, the PMF250XNEX has several features that make it superior to previous generations.
Application Field
The PMF250XNEX is most commonly used for a wide range of applications involving power management and switching. From controlling the speed of a motor to power conversion and efficient power delivery, this MOSFET offers superior performance and stability. Additionally, it is also suitable for other applications that need to be optimized, such as automotive systems and consumer electronics.
This type of MOSFET works well in process control, switching power supplies, and power regulation. The PMF250XNEX is widely used to drive high voltage switching circuits and power converter applications. Its superior switching speed and power efficiency make it ideal for high power applications in a wide range of industrial applications.
Working Principle
The working principle of the PMF250XNEX is based on the transistor-power-mode principle. This principle involves the use of two or more transistors with three connections that are referred to as the collector, emitter and base. The emitter is connected to the source of the voltage, and the collector is connected to the load. The base is connected to the gate, which is used to turn the current on and off.
When the gate is open, it allows the current to flow from the collector to the emitter. This causes the voltage across the channel to increase, which causes the MOSFET to turn on. When the gate is closed, it stops the current from flowing, thus turning off the MOSFET.
The PMF250XNEX has very low gate threshold voltage, which allows it to turn on and off quickly. Additionally, this MOSFET has a high current capacity, which makes it suitable for powering motor drives, power converter systems, and other high power systems.
The superior performance of the PMF250XNEX is due to its state-of-the-art design. It utilizes the latest technological advancements such as multiple-gate processes, high carrier mobilities, and advanced passivation layers. These features not only provide superior performance, but also allow it to operate with high efficiency and at low voltages.
Conclusion
The PMF250XNEX is a state-of-the-art MOSFET that is designed for high power applications. It has superior performance and stability, making it a perfect choice for high voltage switching circuits, power converter systems and other applications. Additionally, it utilizes the latest technological advancements to provide superior performance and efficiency.
The specific data is subject to PDF, and the above content is for reference
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