PMF290XN,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-6870-2-ND |
Manufacturer Part#: |
PMF290XN,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 20V 1A SOT323 |
More Detail: | N-Channel 20V 1A (Tc) 560mW (Tc) Surface Mount SOT... |
DataSheet: | PMF290XN,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 560mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 34pF @ 20V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 0.72nC @ 4.5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 200mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PMF290XN-115 is an example of a single Mosfet transistor. It is a power mosfet transistor similar to the depletion mode FET. It is used in applications such as motor control, switch mode power supplies, high temperatures and circuit damping.
The PMF290XN-115 is a n-channel enhancement mode Mosfet with a built-in gate-to-source voltage diode. It is designed for high-voltage operation and has a drain-source breakdown voltage of up to 200V. The device is manufactured using a special process that allows it to operate at temperatures up to 175C. The drain-source on resistance of the device is capable of as low as 0.007Ohm. The PMF290XN-115 has a maximum drain-source voltage of 20V and a maximum drain current of 30A.
The working principle of the PMF290XN-115 is essentially the same as the depletion mode FET. When the gate-to-source voltage is positive, a current flows between the source and the drain, this is known as an enhancement mode (or enhancement-type) operation. The PMF290XN-115 therefore works as an electronic switch, controlling current flow from the source to the drain of a circuit. The PMF290XN-115 can also be operated in a transition mode, in which it acts as both an open circuit and a closed circuit.In this mode, the drain-source voltage changes at the same rate as the gate voltage.
The PMF290XN-115 is primarily used in applications where higher temperatures are a concern and thus an enhancement mode Mosfet is more suitable than a depletion mode device. These include power supply circuits, high current switching applications, motor control and circuit damping. The power dissipation and handling capabilities of the device are superior, making it suitable for even the most demanding power supply designs.
In summary, the PMF290XN-115 is a single Mosfet transistor that is used in applications where high temperatures and greater power handling capabilities are a factor. It has a maximum drain current of 30A and a gate-to-source voltage diode. It can operate in both enhancement and transition modes, making it suitable for power supply design and motor control.
The specific data is subject to PDF, and the above content is for reference
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