| Allicdata Part #: | 568-10784-2-ND |
| Manufacturer Part#: |
PMF250XN,115 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | MOSFET N-CH 30V 0.9A SOT323 |
| More Detail: | N-Channel 30V 900mA (Ta) 275mW (Ta), 1.065W (Tc) S... |
| DataSheet: |  PMF250XN,115 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SOT-323-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 275mW (Ta), 1.065W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.1nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 300 mOhm @ 900mA, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 900mA (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The PMF250XN,115 is a type of transistor. It’s an FET, a field effect transistor that’s also referred to as a MOSFET or a Metal Oxide Semiconductor Field Effect Transistor. It’s a single device FET, which means it’s generally used by itself and not as part of a set. This specific FET has been designed as an enhancement mode FET. What this means is that the device is biased in such a way that it’s always switched on when given a signal.
The PMF250XN,115 is primarily used in applications such as power conversion, motor drives, and other power electronic applications that require low on-state resistance and high switching speed. The FET is capable of controlling large amounts of power, making it ideal for such applications. The FET’s relatively wide body also makes it suitable for high-voltage applications.
The working principle behind the PMF250XN,115 is based on the fact that it is a field-effect controlled device. This makes it different from a regular MOSFET in that the gate (the input) of the FET is capable of controlling the flow of current. This works by the MOSFET’s gate voltage causing a field in the device, which then affects the channel of the MOSFET and speeds up or slows down the current flow through the device.
The PMF250XN,115 is a high-performance device and is capable of handling large amounts of power. Its low on-state resistance allows it to operate at high speeds, making it suitable for a wide range of applications. The wide body also allows it to be used in high-voltage applications, ensuring that it can handle power conversion and motor drives with ease.
The PMF250XN,115 is a great choice for any power electronic application as it offers a wide range of features, such as high-performance, high-speed operation and a robust design. Its high-performance combined with its wide body makes it suitable for a variety of applications and ensures that it is an ideal choice for any power conversion, motor drive, or other power-related application.
The specific data is subject to PDF, and the above content is for reference
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