R6004ENX Allicdata Electronics
Allicdata Part #:

R6004ENX-ND

Manufacturer Part#:

R6004ENX

Price: $ 1.01
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 600V 4A TO220
More Detail: N-Channel 600V 4A (Tc) 40W (Tc) Through Hole TO-22...
DataSheet: R6004ENX datasheetR6004ENX Datasheet/PDF
Quantity: 310
1 +: $ 0.91350
10 +: $ 0.80829
100 +: $ 0.63901
500 +: $ 0.49556
1000 +: $ 0.39123
Stock 310Can Ship Immediately
$ 1.01
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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R6004ENX is a type of single field-effect transistor (FET). It is specifically designed for use in amplifiers where current gain, high-frequency roll-off, and wide bandwidth is needed. Its applications lies in various consumer electronics, commercial audio and RF systems.

A FET is a type of transistor, which is made up of two regions, a source and a drain, separated by a region called the gate. A FET is a voltage-controlled device which works by modulating the current between the source and the drain. This is accomplished by applying a voltage to the gate, which changes the voltage potential difference between the drain and the source, allowing current to flow through the channel.

The R6004ENX, in particular, is a single enhancement type FET, which is optimized for use as an amplifier with high-current gain and wide bandwidth. This device is designed with a shielded gate and low ohmic resistors, reducing the amount of distortion in the signal. This allows for improved low-noise, high-efficiency performance.

The working principle of the R6004ENX is that it works by modulating the current between the source and the drain. When a voltage is applied to the gate, the voltage potential difference between the source and the drain is reduced, allowing current to flow through the channel. Then, the current gain and wide bandwidth are improved by the shielded gate and low ohmic resistors.

The R6004ENX can be used in various consumer electronics and commercial audio systems. For example, it can be used in audio amplifiers, power amplifiers, and subwoofers. It can also be used in RF systems, such as cellular phone antennas and RF receivers. Additionally, it can be used in switching and control applications.

In summary, the R6004ENX is a single enhancement type FET optimized for use as an amplifier. Its applications lies in various consumer electronics, commercial audio and RF systems. It works by modulating the current between the source and the drain when a voltage is applied to the gate. The shielded gate and low ohmic resistors reduce the amount of distortion in the signal, allowing for improved low-noise, high-efficiency performance.

The specific data is subject to PDF, and the above content is for reference

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