| Allicdata Part #: | R6004ENX-ND |
| Manufacturer Part#: |
R6004ENX |
| Price: | $ 1.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 600V 4A TO220 |
| More Detail: | N-Channel 600V 4A (Tc) 40W (Tc) Through Hole TO-22... |
| DataSheet: | R6004ENX Datasheet/PDF |
| Quantity: | 310 |
| 1 +: | $ 1.01000 |
| 10 +: | $ 0.97970 |
| 100 +: | $ 0.95950 |
| 1000 +: | $ 0.93930 |
| 10000 +: | $ 0.90900 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FM |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 980 mOhm @ 1.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Bulk |
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R6004ENX is a type of single field-effect transistor (FET). It is specifically designed for use in amplifiers where current gain, high-frequency roll-off, and wide bandwidth is needed. Its applications lies in various consumer electronics, commercial audio and RF systems.
A FET is a type of transistor, which is made up of two regions, a source and a drain, separated by a region called the gate. A FET is a voltage-controlled device which works by modulating the current between the source and the drain. This is accomplished by applying a voltage to the gate, which changes the voltage potential difference between the drain and the source, allowing current to flow through the channel.
The R6004ENX, in particular, is a single enhancement type FET, which is optimized for use as an amplifier with high-current gain and wide bandwidth. This device is designed with a shielded gate and low ohmic resistors, reducing the amount of distortion in the signal. This allows for improved low-noise, high-efficiency performance.
The working principle of the R6004ENX is that it works by modulating the current between the source and the drain. When a voltage is applied to the gate, the voltage potential difference between the source and the drain is reduced, allowing current to flow through the channel. Then, the current gain and wide bandwidth are improved by the shielded gate and low ohmic resistors.
The R6004ENX can be used in various consumer electronics and commercial audio systems. For example, it can be used in audio amplifiers, power amplifiers, and subwoofers. It can also be used in RF systems, such as cellular phone antennas and RF receivers. Additionally, it can be used in switching and control applications.
In summary, the R6004ENX is a single enhancement type FET optimized for use as an amplifier. Its applications lies in various consumer electronics, commercial audio and RF systems. It works by modulating the current between the source and the drain when a voltage is applied to the gate. The shielded gate and low ohmic resistors reduce the amount of distortion in the signal, allowing for improved low-noise, high-efficiency performance.
The specific data is subject to PDF, and the above content is for reference
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| R6004ENJTL | ROHM Semicon... | 0.43 $ | 1000 | MOSFET N-CH 600V 4A LPTN-... |
| WP7B-S050VA1-R6000 | JAE Electron... | 1.06 $ | 1000 | CONN RCPT 0.4MM 50POS DUA... |
| WP9-P024VA1-R6000 | JAE Electron... | 0.48 $ | 1000 | CONN PLG 0.4MM NW 24POS D... |
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| WP7B-S034VA1-R6000 | JAE Electron... | -- | 1000 | CONN RCPT 0.4MM 34POS DUA... |
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| WP3-S024VA1-R6000 | JAE Electron... | 0.55 $ | 1000 | CONN RCPT 0.4MM 24POS DUA... |
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| WP6C-S024VA1-R6000 | JAE Electron... | 0.67 $ | 1000 | CONN RCP 0.4MM SHLD 24POS... |
| R6004ENX | ROHM Semicon... | 1.01 $ | 310 | MOSFET N-CH 600V 4A TO220... |
| WP7-P020VA1-R6000 | JAE Electron... | 0.21 $ | 1000 | CONN PLUG 0.4MM 20POS DUA... |
| WP9-S040VA1-R6000 | JAE Electron... | 0.77 $ | 1000 | CONN RCP 0.4MM NW 40POS D... |
| WP9-P060VA1-R6000 | JAE Electron... | 1.11 $ | 1000 | CONN PLG 0.4MM NW 60POS D... |
| R60030-1PR | Eaton | 0.0 $ | 1000 | FUSE BLOCK CART 600V 30A ... |
| WP7B-P050VA1-R6000 | JAE Electron... | 0.41 $ | 1000 | CONN PLUG 0.4MM 50POS DUA... |
| R6009ENJTL | ROHM Semicon... | 0.96 $ | 1000 | MOSFET N-CH 600V 9A LPTN-... |
| WP6-S010VA2-R6000 | JAE Electron... | 0.2 $ | 1000 | CONN RCP 0.4MM SHLD 10POS... |
| WP6C-P024VA1-R6000 | JAE Electron... | 0.64 $ | 1000 | CONN PLG 0.4MM SHLD 24POS... |
| WP7B-P040VA1-R6000 | JAE Electron... | -- | 1000 | CONN PLUG 0.4MM 40POS DUA... |
| R6002025XXYA | Powerex Inc. | 53.56 $ | 1000 | DIODE GEN PURP 2KV 250A D... |
| R60030-1COR | Eaton | 0.0 $ | 1000 | FUSE BLOCK CART 600V 30A ... |
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R6004ENX Datasheet/PDF