R6004ENJTL Discrete Semiconductor Products |
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Allicdata Part #: | R6004ENJTLTR-ND |
Manufacturer Part#: |
R6004ENJTL |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 4A LPT |
More Detail: | N-Channel 600V 4A (Tc) 40W (Tc) Surface Mount LPTS... |
DataSheet: | R6004ENJTL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.39123 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | LPTS (D2PAK) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 980 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The R6004ENJTL FET is a single-chip, Field Effect Transistor (FET) designed for a variety of applications in both high-power and pre-amplification stages. It is packaged in a JEDEC TO-220 package, providing industrial standard flexibility and compatibility. In this article, we will discuss the application field and the working principle of this FET.
Application Field
The R6004ENJTL is suitable for many applications including high current efficient switching, power supply regulation, over voltage/current protection, high speed switching, amplification of low-level signals, and audio circuits. It can be used in many combinations with other components to provide a complete electronic solution.
In switching applications, the device is capable of handling up to 10A of continuous current and up to 25A of peak current. This is well suited for applications involving high currents and fast switching speeds, such as automotive and industrial systems. In power supply regulation, the device can be used to accurately and efficiently regulate the output voltage of an AC to DC converter. Due to its high current handling capability, it can be used in power supplies with rated power levels up to 1.5KW, making it suitable for a wide range of applications.
In over voltage/current protection, the R6004ENJTL is well suited to protect the electronic modules and circuits from high currents or voltages. It can detect the over current/voltage and quickly shut off the device to protect the circuit, preventing expensive damage. The device is also well suited for working in audio environments, as it is capable of providing linear amplification of low-level signals.
Working Principle
The R6004ENJTL is a Field Effect Transistor (FET), which means that it is capable of controlling high currents using signals at low power levels. FETs work by using an electric field to change the conductance between a source and a drain, depending on the voltage applied to the gate. This allows the FET to be used as a switch, where a small voltage applied to the gate can control large currents.
The R6004ENJTL consists of a single chip, in a JEDEC TO-220 package. It contains a single gate, drain and source terminal, with a minimum impedance of 0.3 ohms. It has a maximum voltage rating of 20V, and can handle up to 10A of continuous current, and up to 25A of peak current. This makes it well suited for high current applications and audio amplifiers.
In operation, the FET works by changing its resistance between the source and drain terminals, depending on the voltage applied between the gate and source. This can be used as a switch, controlling the flow of current between the drain and source. The voltage applied to the gate determines the resistance between the source and drain, allowing current to be controlled.
In addition to its switching capabilities, the R6004ENJTL can also be used as a linear amplifier. This is achieved by modulating the voltage applied to the gate, allowing a small input signal to be amplified. The transconductance of the FET can be used to accurately control the gain of the amplifier.
Overall, the R6004ENJTL FET is a single chip Field Effect transistor, designed for a variety of applications. It is suitable for use in switching applications, power supply regulation, over voltage/current protection, and audio circuits. It has a maximum voltage rating of 20V, and can handle up to 10A of continuous current, and up to 25A of peak current. It has a single gate, drain, and source terminal, with a minimum impedance of 0.3 ohms.
The specific data is subject to PDF, and the above content is for reference
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