Allicdata Part #: | R6046ANZ1C9-ND |
Manufacturer Part#: |
R6046ANZ1C9 |
Price: | $ 13.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 46A TO247 |
More Detail: | N-Channel 600V 46A (Tc) 120W (Tc) Through Hole TO-... |
DataSheet: | R6046ANZ1C9 Datasheet/PDF |
Quantity: | 450 |
1 +: | $ 11.98260 |
10 +: | $ 10.89400 |
100 +: | $ 9.25967 |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6000pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 23A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 46A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Bulk |
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:The R6046ANZ1C9 is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which is a type of transistor that operates by using voltage to switch on and off current, rather than using current to change the flow of electricity, as happens with an ordinary transistor.
Depending on the application of the R6046ANZ1C9, it can be used in a wide range of applications, including power supply regulation, current sensing and regulation, overall power and signal conditioning, motor control, switch-mode power supplies, and other various applications.
In terms of its electrical characteristics, the R6046ANZ1C9 is capable of controlling large amounts of current due to its high breakdown voltage of 60V. Its RMS continuous current rating is 5.44A, while its On-state resistance is 0.066 ohms. Thus, it can be used for applications where high-power, low-voltage currents need to be accurately managed, such as switch-mode power supplies, motor control, and current sensing, among others.
The R6046ANZ1C9 operates using two main principles. The first is the P-N junction, which is the basic principle behind how transistors operate. The second is a gate-body electric field, also known as a MOS gate. This is an electrostatic field that is generated between the gate and body of the transistor, which is used to electrically control the flow of current through the device.
In terms of its working principle, the R6046ANZ1C9 operates by relying on the P-N junction and the gate-body electric field. When the gate receives a positive signal, it closes the P-N junction and creates an electric field between the gate and the body, allowing current to flow through the transistor. Conversely, when the gate receives a negative signal, it opens the P-N junction and stops current from flowing through it.
Overall, the R6046ANZ1C9 is a single MOSFET that is capable of controlling large amounts of current due to its high breakdown voltage and RMS continuous current rating. It can be used for a variety of applications, including power supply regulation, current sensing and regulation, overall power and signal conditioning, and motor control, among others. It operates using the principles of the P-N junction and the gate-body electric field, allowing current to be electrically controlled in order to meet the needs of the application.
The specific data is subject to PDF, and the above content is for reference
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