Allicdata Part #: | R6046FNZC8-ND |
Manufacturer Part#: |
R6046FNZC8 |
Price: | $ 14.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 46A TO-3PF |
More Detail: | N-Channel 600V 46A (Ta) 120W (Tc) Through Hole TO-... |
DataSheet: | R6046FNZC8 Datasheet/PDF |
Quantity: | 605 |
1 +: | $ 12.87720 |
10 +: | $ 11.70790 |
100 +: | $ 9.95176 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 93 mOhm @ 23A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 46A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Bulk |
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The R6046FNZC8 is an enhancement-mode n-channel MOSFET that has been designed for a variety of applications including power supplies, ground switching and DC-DC converters. It utilizes an advanced trench technology that provides low on-state resistance and a low gate charge for faster switching. This MOSFET is capable of operating at temperatures from -55°C to 175°C and is offered in an ultra-small TO-92-3L package.
The R6046FNZC8 is functionally composed of three parts: the gate, the drain and the source. The gate is the control terminal of the device and is used to turn the MOSFET on or off. The drain is the output terminal that is connected to the load. The source is the input terminal that is connected to the power supply. The working principle of a MOSFET is based on the operation of a semiconductor gate, which can be either an N-type or P-type semiconductor. It functions by modulating the resistance between the drain and the source terminals when the gate voltage is varied from low to high.
In the R6046FNZC8, electrons move from the source to the drain, causing the current to flow from drain-to-source. This is the basic principle behind the MOSFET and is used for various applications such as switching, amplification, and signal conditioning. Thanks to its high input impedance, the R6046FNZC8 is a suitable option when dealing with high voltage, high frequency signals.
In addition, it can also be used for motor control, as it is able to switch off quickly and smoothly. It is perfect for high-speed digital circuits as well as low power linear applications such as amplifier stages and power amplifiers. Due to its wide operating temperature range and fast switching capability, the R6046FNZC8 is ideal for industrial automation and robotics.
Overall, the R6046FNZC8 provides a cost-effective solution for high voltage and high frequency applications while being able to withstand extreme temperatures and offering optimal switching performance. This MOSFET can be employed in a variety of scenarios ranging from high power automotive electronics, power supplies, and motor control to low-power amplifiers and signal conditioning.
The specific data is subject to PDF, and the above content is for reference
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