R6047ENZ1C9

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The R6047ENZ1C9 is a single field effect transistor (FET) designed to provide high voltage and power switching with low on-resistance, minimal switching losses and a rugged gate source design. Ideal for high voltage applications such as motor speed control, switching power supplies, motor driver interference suppression, portable device protection and gate voltage control, the R6047ENZ1C offers high-efficiency operation with a wide operating temperature range of -65°C to +175°C.

The R6047ENZ1C9 is manufactured using a N-channel enhancement mode process, which allows it to switch from an OFF (low on resistance) state to an ON (high on resistance) state. This device uses a process similar to die-sized FETs, in which both size and cost can be optimized without compromising performance. It also features excellent behavior on both the N-channel and P-channel sides of the I-V curve.

The R6047ENZ1C9 offers a wide range of features. It features HV FLOW-THRU technology, which increases the current handling capacity and provides a low number of turns on the gate-drain-source connection. This allows the devices to be used in even the most demanding applications. It also features ultra-low gate-threshold voltage and excellent noise immunity due to its low-capacitance design.

In order to optimize the performance of the R6047ENZ1C9, its gate-to-source capacitance is extremely low. This helps to reduce the input current noise and protect against side band interference. The gate-source voltage drop is minimized by a special high-density MOSFET structure, which reduces the conduction losses and minimizes the power dissipation at high current levels. Additionally, the device has a wide variety of temperature protection features, making it ideal for operating in the most extreme conditions.

When it comes to operation, the R6047ENZ1C9 is designed to reduce electromagnetic interference (EMI). It features an EMI shield and EMI absorber that help to reduce both near-field and far-field noise while keeping the device in its intended operating environment. Additionally, it has an optimized ESD protection mechanism, which enables the device to pass all common ESD tests with minimal leakage current.

From an operational point of view, the R6047ENZ1C9 is designed to ensure accurate switching. It features a quick resistance switching capability and a very low on-resistance. Additionally, it has an adjustable impedance control, allowing the device to be configured for best performance in specific applications. It also offers excellent speed characteristics, reducing transition time from OFF to ON from as low as 10ns.

The R6047ENZ1C9 is designed to offer excellent thermal performance. Its low-profile construction and low thermal resistance ensure that heat is evenly distributed across the board, resulting in optimal power dissipation. Additionally, its optimized RthJC guarantees that the device can operate reliably under extreme thermal conditions, enabling it to cope with temperatures up to +175°C.

The R6047ENZ1C9 is an excellent choice for a wide range of high voltage and power switching applications. It offers efficient operation, low on-resistance, and a wide operating temperature range, making it an ideal choice for motor speed control, switching power supplies, motor driver interference suppression, portable device protection, and gate voltage control. Additionally, it is designed with optimized EMI protection and excellent thermal performance, allowing it to operate reliably even in the most demanding environments.

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