Allicdata Part #: | R6046ANZC8-ND |
Manufacturer Part#: |
R6046ANZC8 |
Price: | $ 9.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 10V DRIVE TO-3PF |
More Detail: | N-Channel 600V 46A (Ta) 120W (Tc) Through Hole TO-... |
DataSheet: | R6046ANZC8 Datasheet/PDF |
Quantity: | 1000 |
360 +: | $ 8.31005 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 46A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 81 mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 6000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 120W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PF |
Package / Case: | TO-220-3 Full Pack |
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The R6046ANZC8 is a stacked FETs and MOSFETs device that has become a widely-used element in a large variety of applications. It provides both high-voltage and high-current performance, making it a must-have device in many applications. In this article, we\'ll discuss the R6046ANZC8 device\'s application field and working principle in detail.
The R6046ANZC8 device is a low-profile and power-optimized stacked FETs and MOSFETs device. It has been designed with high-voltage, high-current performance and power optimization in mind, making it an excellent choice for a wide variety of applications. It is capable of delivering up to 900V of power, and up to 600A of current, with a low on-resistance of just 0.66mΩ. Its power optimization features make it an ideal choice for high-load applications in consumer electronics, automotive and industrial systems.
The R6046ANZC8 is designed to be used as an input switch for power optimization in power management schemes. It is also ideal for circuit protection in automotive and industrial system applications as its low on-resistance minimizes any power loss. The device is also ideal for high-frequency switching due to its low gate charge and capacitance. The R6046ANZC8 is capable of providing long cycle times and low switching losses, making it an efficient way to optimize power. Overall, the R6046ANZC8 is an excellent choice for power optimization in a variety of applications.
In terms of its working principle, the R6046ANZC8 utilizes a stacked FETs and MOSFETs configuration to provide a high-voltage and high-current performance. This configuration is made up of two FETs and one MOSFET, where the FETs are used to control the gate voltage of the MOSFET, and the MOSFET acts as the main switch. When the gate voltage is applied, the MOSFET switches on and provides the current. The FETs can be simultaneously used to control the current levels and minimize losses.
Overall, the R6046ANZC8 is an excellent device for power optimization in a variety of applications. Its low on-resistance allows it to efficiently switch high-current and high-voltage levels, and its power optimization features make it ideal for high-load applications. Additionally, its stacked FETs and MOSFETs configuration allows it to provide an efficient way to optimize power. If you\'re looking for a device to optimize power in your application, the R6046ANZC8 is an excellent choice.
The specific data is subject to PDF, and the above content is for reference
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