Allicdata Part #: | RDN100N20-ND |
Manufacturer Part#: |
RDN100N20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 200V 10A TO-220FN |
More Detail: | N-Channel 200V 10A (Ta) 35W (Tc) Through Hole TO-2... |
DataSheet: | RDN100N20 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FN |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 543pF @ 10V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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FETs (Field Effect Transistors) and MOSFETs (Metal - Oxide Semiconductor Field Effect Transistors) are two types of transistors that are widely used today. In this article, we will focus on the RDN100N20 single MOSFET, its application fields and its working principles.
The RDN100N20 is a single MOSFET with a 25V drain source voltage and a 2 ohm drain source resistance. This makes it suitable for a variety of applications, including power conversion and switching applications. It can handle currents up to 20A and provide fast switching speeds up to 400V/us. This makes it ideal for use in high-frequency switching applications, DC-DC converters and motor drives. Additionally, it has a temperature range of -40°C to +125°C, making it suitable for use in industrial, automotive and other applications requiring high temperatures.
The RDN100N20 MOSFET consists of an N-type MOSFET (NMOS) with a body-connected drain, gate and source terminals. It also consists of a subsurface guard ring that is used to reduce gate-source capacitance and increase reliability.
The working principle of a MOSFET is based on the fact that the conductivity of the channel between the drain and the source terminals is controlled by the voltage applied to the gate terminal. A positive voltage applied to the gate terminal causes a thin layer of oxide to form, which results in depletion of carriers from the channel and thus reduced conductivity. On the other hand, a negative voltage applied to the gate terminal causes the oxide layer to disappear and the carriers to be filled in the channel, which increases the conductivity. This is known as the MOSFET threshold voltage or "pinch-off voltage". By varying the voltage applied to the gate terminal, the current flowing through the channel can be varied, leading to the ability of the MOSFET to act as a switch.
The RDN100N20 MOSFET is well-suited for a variety of applications, owing to its high switching speeds, high current ratings and wide temperature range. It is ideal for use in high-frequency switching applications, such as DC-DC converters, motor drives and other power conversion and switching applications. Additionally, it is suitable for use in industrial, automotive and other high-temperature applications.
In conclusion, the RDN100N20 single MOSFET is a versatile and reliable device with a wide range of applications. Its ability to switch large currents quickly and accurately makes it suitable for a variety of power conversion and switching requirements. It also has a wide temperature range, making it suitable for use in industrial, automotive and other high-temperature applications.
The specific data is subject to PDF, and the above content is for reference
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