Allicdata Part #: | RDN100N20FU6-ND |
Manufacturer Part#: |
RDN100N20FU6 |
Price: | $ 2.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 200V 10A TO-220FN |
More Detail: | N-Channel 200V 10A (Ta) 35W (Tc) Through Hole TO-2... |
DataSheet: | RDN100N20FU6 Datasheet/PDF |
Quantity: | 22 |
1 +: | $ 1.97820 |
10 +: | $ 1.78542 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FN |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 543pF @ 10V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Bulk |
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The RDN100N20FU6 is a single junction field effect transistor (FET), a type of transistor that utilizes an electric field to control the movement of electrons and ions. It is a N-Channel FET, which means that it utilizes a negative voltage channel to open or close the primary current channel, allowing or preventing current passage through the device. It is primarily used in applications that require a low-voltage, high-performance FET for switching, amplifying, and regulating currents of electricity.
The RDN100N20FU6 is optimized for operation in the switching mode and is designed to handle 100V/20A/20Ω of continuous/peak current. It has a maximum voltage level of 100 volts, a maximum current of 20 amps, and a maximum resistance of 20 ohms. Its drain-source breakdown voltage (Vds) is 130 volts, gate-source resistance (Rgs) is below 2 ohms, drain-source on-state resistance (Rds) is 7.5 milliohms, junction capacitance (Cj) is 70pF, and thermal resistance (Rth) is 2.2K/W. Overall, it is an effective, low-cost option for a wide range of applications.
The RDN100N20FU6 has a variety of applications, ranging from automotive to industrial. It is commonly used as a switching device in trucking and fleet management systems, as it works reliably with the heavy-duty power needed to operate those systems. In industrial settings, it can be used in motor control circuits to help regulate and monitor the current for motors. It is also used in various consumer products such as cell phones and TV screens, as it is capable of efficiently handling the intense power usage of these devices.
Because of its low-cost and reliable operation, the RDN100N20FU6 is an excellent choice for a variety of applications. Its small size and lightweight design makes it easy to install, while its wide range of features and performance attributes make it a great choice for many applications. Its design also enables it to function easily and efficiently at different temperatures and in a variety of conditions.
The working principle of the RDN100N20FU6 is relatively straightforward. It is essentially a variable resistor that utilizes a voltage to control the current flowing through the device. It has an input terminal called the gate and an output terminal known as the drain. When a voltage is applied to the gate, an electric field is created, which attracts electrons from the drain and allows current to pass through. The amount of current that can pass through the device is determined by the gate voltage of the device.
The RDN100N20FU6 is an excellent choice for a wide range of applications. It is small, reliable, and efficient, making it ideal for a variety of applications. Its low-cost and high-performance capabilities make it suitable for automotive, industrial, and consumer electronics. Its wide voltage range and resistance attributes make it an excellent choice for a wide range of applications that require a low-cost, high-performance field effect transistor.
The specific data is subject to PDF, and the above content is for reference
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