RDN120N25FU6

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FN
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1224pF @ 10V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	62nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	210 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Bulk

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RDN120N25FU6 Application Field and Working Principle

An RDN120N25FU6 is a high performance N-Channel enhancement mode MOSFET. This device is suitable for a broad range of industries, including automotive, audio-video, industrial, and military applications. It has an ultra-low on-state resistance (RDS(on)) of 11.7 mOhms. The device is often used as an isolated high-side switch in applications such as lighting and power control, or for motor control.The RDN120N25FU6 is a metal oxide semiconductor field-effect transistors (MOSFET). This type of transistor is made up of a three terminal structure consisting of a source, gate, and drain. The source and drain contacts are ohmic contacts and the control terminal, the gate, is a capacitive coupling. A MOSFET typically has a metal oxide layer between the gate and the channel. This provides an insulation barrier between the gate and the channel and the drain. The RDN120N25FU6 is an enhancement mode device which means it is normally OFF when the gate-to-source voltage is zero. In order to turn it ON and generate a current, a voltage must be applied to the gate and increase it to the turn-on threshold. This threshold voltage is typically 4.5 volts. Once on, the device has an RDS(on) of 11.7 mOhms which provides low conduction loss when switching.The STF12NM60N is capable of handling peak drain currents of 120A and holding voltages of up to 25V. Its gate charge (Qg) is relatively low - 2.5nC which helps reduce switching losses and improves efficiency, especially for high frequency switching. The device has a rated avalanche energy (EAS)of 57mJ making it suitable for energy applications.The RDN120N25FU6 features industry standard pinout and has a maximum drain-source breakdown voltage of 600V. The device also has Pb-free solder technology and NiPdAu metal plating. It is also RoHS compliant, enabling it to be used in protective and environmentally sensitive applications.In summary, the RDN120N25FU6 is a high performance N-Channel enhancement mode MOSFET which is best suited for automotive, audio-video, industrial, and military applications. It has a low RDS(on) and is capable of handling up to 120 amps at 25V. The Qg of 2.5nC helps reduce switching losses and the EAS of 57mJ makes it suitable for energy applications. Overall, the RDN120N25FU6 is a reliable and efficient device for medium to high power applications.

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