RDN120N25

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A RDN120N25 is a high voltage Power MOSFET that provides effective and efficient power control for various types of electronic devices and circuits. The device comprises high voltage n-channel enhancement mode field effect transistors. These transistors have a low threshold voltage of 2.5V and a drain current capability of 120A.

RDN120N25 devices exhibit excellent dynamic characteristics that allow high-frequency operation, low gate charge and low switching losses. These features, together with their low on-resistance, make them an ideal choice for modern, low-power applications. Additionally, the devices feature an internal avalanche limitation that allows safe operation at high drain-source voltages, making them suitable for high power applications.

Application field

RDN120N25 devices are typically used in applications such as motor control, DC-DC converters, UPS, power inverters, audio amplifiers and high-quality audio applications. They are also ideal for high-current switching applications in the automotive, industrial, and telecommunications markets. In addition, the low on-resistance and low overall power loss of the devices make them suitable for high-power applications, such as power amplifiers for radio communication and high-efficiency LED lighting.

Working principle

The RDN120N25 is an enhancement-mode MOSFET, meaning that the voltage across its source-drain terminals can be controlled using the gate voltage. When the gate voltage is greater than its threshold value, the device turns on and the current begins to flow through the drain-source terminals. When the gate voltage is less than its threshold value, the device turns off and the current is switched off.

Given their high power capability and low on-resistance, RDN120N25 devices are often used in high-power applications, such as motor control, where they can switch large amounts of current with reduced power loss. Additionally, they can be used in DC-DC converters, as well as in audio amplifiers and audio applications that require high-quality sound reproduction.

In addition to their use in high-power applications, RDN120N25 devices can also be very useful for low-power applications, as their low threshold voltage and low gate charge make them ideal for use in low-power applications.

In the automotive and telecommunications fields, RDN120N25 devices are used in high-current switching applications, due to their low loss, low on-resistance and high-speed switching capabilities. They are also becoming increasingly popular in LED lighting applications, due to their low power consumption, high power efficiency and high switching speeds.

Overall, the RDN120N25 is a high voltage Power MOSFET that provides effective and efficient power control for various types of electronic devices and circuits. With their high power capability, low-power consumption and low on-resistance, they are an excellent choice for a wide range of applications.

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