Allicdata Part #: | RDN150N20FU6-ND |
Manufacturer Part#: |
RDN150N20FU6 |
Price: | $ 1.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 200V 15A TO-220FN |
More Detail: | N-Channel 200V 15A (Ta) 40W (Tc) Through Hole TO-2... |
DataSheet: | RDN150N20FU6 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 1.20267 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FN |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1224pF @ 10V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Bulk |
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The RDN150N20FU6 transistor is an essential component used in a wide range of electronic circuits and consumer electronics. It is a field-effect transistor, or FET, and it can be used to control and regulate the flow of power in circuits, as well as to perform switching functions. In this article, we will look at the application fields for the RDN150N20FU6 transistor, how it works, and what its key features are.
The RDN150N20FU6 transistor is a single-configuration, N-channel MOSFET, meaning that it can carry out functions like voltage regulation, signal switching and signal modulation. It is commonly used in various applications, including power conditioning and power supply, such as adjustable voltage regulators, current limiters, and DC-powered amplifiers. It can also be used in switching applications, such as power supplies, to boost the efficiency of the circuit. In addition, the RDN150N20FU6 can be used in applications such as audio amplifiers, signal amplifiers, signal modulators and oscillators, as well as in RF (radio frequency) amplifiers.
The basic working principle of the RDN150N20FU6 is that it acts as a switch, controlling and regulating the flow of power in a circuit. Its basic operation involves the construction of a closed loop between the Gate and Source terminals, which has a positive feedback effect on the voltage at the Source. This produces a voltage difference between the Gate and Source, which can be adjusted by changing the voltage on the Gate. This voltage difference is known as the Drain-Source voltage (VDS). This voltage determines the current flow through the transistor, and can be used to control the power delivery in a circuit.
The key features of the RDN150N20FU6 are its high voltage tolerance and low on-resistance. It is capable of working with voltages of up to 150 volts, and its on-resistance is rated at 20 Ohms. It also features a maximum Drain-Source saturation current of up to 17 Amps. The RDN150N20FU6 is also designed for broad temperature operation, with a maximum operating temperature of up to 175°C.
The RDN150N20FU6 transistor is a versatile and reliable component which can be used in a wide range of applications. Its high voltage tolerance and low on-resistance make it particularly useful for controlling and regulating the flow of power in circuits, as well as for switching and modulating signals. It is commonly used in power conditioning and power supply applications, as well as in audio amplifiers, signal amplifiers and oscillators, and RF amplifiers.
The specific data is subject to PDF, and the above content is for reference
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