
RN1104T5LFT Discrete Semiconductor Products |
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Allicdata Part #: | RN1104T5LFTTR-ND |
Manufacturer Part#: |
RN1104T5LFT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 0.1W SSM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Base Part Number: | RN110* |
Supplier Device Package: | SSM |
Package / Case: | SC-75, SOT-416 |
Mounting Type: | Surface Mount |
Power - Max: | 100mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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The RN1104T5LFT is a type of single, pre-biased, bipolar junction transistor (BJT). It is used in a range of applications, including switching, amplification and signal processing.A BJT is a type of transistor that consists of three terminals: the collector, the base, and the emitter. The current flow between the collector and the emitter is controlled by the current flow through the base. A BJT is a current-controlled device, meaning that the current at the base will determine the amount of current flowing between the collector and the emitter. The RN1104T5LFT is a single, pre-biased BJT. This means that the device is connected with a voltage at the base, allowing for the control of the current flow between the collector and the emitter without having to externally apply the voltage. This type of BJT is typically used in applications where the load is constantly changing, and the device needs to be adjusted accordingly. For instance, the RN1104T5LFT can be used in switching, amplifying, and signal processing applications. In terms of amplification, the RN1104T5LFT can be used to increase the amplitude of a signal. This is achieved by controlling the current between the collector and the emitter, thus magnifying the input signal. The RN1104T5LFT can also be used in switching applications. By controlling the current between the collector and the emitter, the state of the output can be changed. This can be used to switch between two or more states, or to switch between different voltages. Finally, the RN1104T5LFT can also be used in signal processing applications. By controlling the current flow between the collector and the emitter, the device can be used to modify the frequency, amplitude, or other characteristics of a signal. This can be used in a variety of applications, such as noise cancellation and signal filtering.Overall, the RN1104T5LFT is a type of single, pre-biased BJT. It can be used in a variety of applications, such as switching, amplification, and signal processing. This is due to its ability to control the current flow between the collector and the emitter, thus allowing for various modifications of the input signal.The specific data is subject to PDF, and the above content is for reference
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