| Allicdata Part #: | RN1104CT(TPL3)TR-ND |
| Manufacturer Part#: |
RN1104CT(TPL3) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS NPN 0.05W CST3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: | RN1104CT(TPL3) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 50mA |
| Voltage - Collector Emitter Breakdown (Max): | 20V |
| Resistor - Base (R1): | 47 kOhms |
| Resistor - Emitter Base (R2): | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 50mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | CST3 |
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The RN1104CT(TPL3) is a type of bipolar junction transistor (BJT), commonly used in low-power audio amplifiers and other analog circuits. It is a single pre-biased device, meaning it is biased with a small positive voltage on the base relative to the emitter. This allows it to quickly go from cutoff to saturation and reduce power consumption by keeping the base current low.
The working principle of this type of transistor is based on two p-type and one n-type semiconductor layers, arranged in an NPN configuration. Band theory states that when the base-emitter junction is forward biased, electrons are attracted from the base to the emitter, forming a thin depletion layer between them. When sufficient current is supplied to the base, this thin layer becomes so thin that in a very small amount of time, its entire width is covered with electrons and holes, thus called full depletion. The electrons then inject into the n-type emitter layer and are collected in the collector. As electrons move away from the base, a hole-rich layer is left in the base region. This causes an increase in current and a reduction in voltage, making the transistor to work in saturation.
RN1104CT(TPL3) has an hFE of 60, characteristic frequency of 400kHz, and a maximum collector current rating of 800 mA. Additionally, it has a large range of operating temperature from -55°C to +125°C. Due to these features, the RN1104CT transistor is mainly used for low-power audio amplifier applications, and other analog circuit designs. It is an ideal choice for high frequency switching applications, low cost amplifier designs, and power switch circuits within Integrated Circuits (ICs). This can also be used as a small amplifier in radio frequency (RF) circuits.
In addition to its versatility, the RN1104CT transistor also offers significant advantages over other transistors. It is economical and suitable for simple applications that require fast switching times. Because it is pre-biased, it reduces the time needed to enable the transistor to operate in saturation, thus allowing the components of an analog circuit to optimize their response. This reduces power consumption, making it ideal for battery operated applications. It also offers superior stability and reliability because of its high maximum collector current rating and large operating temperature range.
The RN1104CT is highly versatile and popular among electronics engineers for its wide array of applications. It is primarily used for low-power audio amplifiers and other analog circuits, due to its capability to quickly and efficiently switch between cutoff and saturation, conserving battery power. Additionally, it is versatile and reliable enough to be utilized in high-frequency switching applications and integrated circuits, as well as RF circuits.
The specific data is subject to PDF, and the above content is for reference
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RN1104CT(TPL3) Datasheet/PDF