RN1106CT(TPL3) Allicdata Electronics
Allicdata Part #:

RN1106CT(TPL3)TR-ND

Manufacturer Part#:

RN1106CT(TPL3)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.05W CST3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1106CT(TPL3) datasheetRN1106CT(TPL3) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 50mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Description

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RN1106CT(TPL3) is a single pre-biased transistor from the family of transistors - bipolar (BJT). This low wattage PNP transistor provides good gain and low off-state leakage current characteristics, which makes it suitable for use in a variety of applications.

The RN1106CT(TPL3) features a 2A collector current rating, a gain-bandwidth product of 1.3GHz, and a low saturation voltage of 0.6V. It has a maximum power dissipation of 350mW and a maximum collector-emitter voltage of 300V. It is also RoHS compliant and halogen free.

The RN1106CT(TPL3) is primarily used in line-powered switching applications. This transistor can be used to switch loads such as resistors, relays, and coils. It is also used in non-inverting amplifier circuits due to its low voltage saturation and high gain.

The RN1106CT(TPL3) transistor is composed of two PNP transistors in a single package. It features a pre-biased base which allows the two transistors to be used in a switching circuit with minimal additional components. The two transistors in the package are symmetrically connected, providing a low-offset state and helping to eliminate the need for off-state trimming.

The working principle of the RN1106CT(TPL3) is simple. It is composed of two PNP transistors connected in Darlington arrangement. It features a base pre-biased voltage which helps reduce the turn-ON time. With the base pre-biased, the emitter-base junction is already forward biased. This allows more current to flow through the emitter-base junction and therefore reduces the turn-ON time.

When current flows through the emitter-base junction of the Darlington arrangement, the base current of the second transistor is increased, allowing more current to flow through the collector-emitter junction. This increases the gain and allows the resistor, relay, or coil connected to the collector-emitter junction to be switched with minimal delay.

The RN1106CT(TPL3) is also ideal for use in low power, high speed switching applications. Its pre-biased base allows for fast switching with low off-state leakage current. This combination makes it an excellent choice for line-powered switching. It can also be used in amplifier circuits due to its low voltage saturation and high gain.

The RN1106CT(TPL3) is a versatile, low wattage PNP transistor. It features pre-biased base which allows fast switching and low off-state leakage current. It is ideal for a variety of applications and can be used to switch loads such as resistors, relays, and coils, as well as in non-inverting amplifier circuits.

The specific data is subject to PDF, and the above content is for reference

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