| Allicdata Part #: | RN1106CT(TPL3)TR-ND |
| Manufacturer Part#: |
RN1106CT(TPL3) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS NPN 0.05W CST3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: | RN1106CT(TPL3) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 50mA |
| Voltage - Collector Emitter Breakdown (Max): | 20V |
| Resistor - Base (R1): | 4.7 kOhms |
| Resistor - Emitter Base (R2): | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 50mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | CST3 |
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RN1106CT(TPL3) is a single pre-biased transistor from the family of transistors - bipolar (BJT). This low wattage PNP transistor provides good gain and low off-state leakage current characteristics, which makes it suitable for use in a variety of applications.
The RN1106CT(TPL3) features a 2A collector current rating, a gain-bandwidth product of 1.3GHz, and a low saturation voltage of 0.6V. It has a maximum power dissipation of 350mW and a maximum collector-emitter voltage of 300V. It is also RoHS compliant and halogen free.
The RN1106CT(TPL3) is primarily used in line-powered switching applications. This transistor can be used to switch loads such as resistors, relays, and coils. It is also used in non-inverting amplifier circuits due to its low voltage saturation and high gain.
The RN1106CT(TPL3) transistor is composed of two PNP transistors in a single package. It features a pre-biased base which allows the two transistors to be used in a switching circuit with minimal additional components. The two transistors in the package are symmetrically connected, providing a low-offset state and helping to eliminate the need for off-state trimming.
The working principle of the RN1106CT(TPL3) is simple. It is composed of two PNP transistors connected in Darlington arrangement. It features a base pre-biased voltage which helps reduce the turn-ON time. With the base pre-biased, the emitter-base junction is already forward biased. This allows more current to flow through the emitter-base junction and therefore reduces the turn-ON time.
When current flows through the emitter-base junction of the Darlington arrangement, the base current of the second transistor is increased, allowing more current to flow through the collector-emitter junction. This increases the gain and allows the resistor, relay, or coil connected to the collector-emitter junction to be switched with minimal delay.
The RN1106CT(TPL3) is also ideal for use in low power, high speed switching applications. Its pre-biased base allows for fast switching with low off-state leakage current. This combination makes it an excellent choice for line-powered switching. It can also be used in amplifier circuits due to its low voltage saturation and high gain.
The RN1106CT(TPL3) is a versatile, low wattage PNP transistor. It features pre-biased base which allows fast switching and low off-state leakage current. It is ideal for a variety of applications and can be used to switch loads such as resistors, relays, and coils, as well as in non-inverting amplifier circuits.
The specific data is subject to PDF, and the above content is for reference
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RN1106CT(TPL3) Datasheet/PDF