RN1107ACT(TPL3) Allicdata Electronics

RN1107ACT(TPL3) Discrete Semiconductor Products

Allicdata Part #:

RN1107ACT(TPL3)TR-ND

Manufacturer Part#:

RN1107ACT(TPL3)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.1W CST3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1107ACT(TPL3) datasheetRN1107ACT(TPL3) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Description

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The RN1107ACT(TPL3) is part of a well-known series of Single, Pre-Biased Bipolar Transistors (BJT). These transistors are designed for fast switching applications and offer low on-resistance with low turn-on and turn-off times. These transistors work in a wide range of temperature, voltage and frequency ranges and boast an excellent feedback on signal and turn-off times.

These transistors feed current through their terminals in a structure known as a \'hinge effect\'. This is where the terminals of the transistor are arranged in two opposite facing arms separated by a short distance. By applying a small electric current in the middle of the hinge, the two arms of the transistor open, allowing current to flow in one direction. The current is then regulated by a resistor, which acts as a variable resistor, allowing the amount of current to adjust and remain constant.

The RN1107ACT(TPL3) transistors are designed to be used in switch mode applications and to operate in a range of operating conditions. They are notable for their performance in high-frequency switching and their ability to provide good switching times in both low- and high-voltage systems. Their low on-resistance makes them applicable in a broad range of switching applications, including data communications, motor and HVAC control, and industrial automation. These transistors are highly reliable and provide excellent performances over extended temperature ranges.

The RN1107ACT(TPL3) transistors offer a wide range of operating temperature and voltage ranges. The operating temperature range ranges from -55°C to +150°C and the voltage is rated up to 60V. These transistors are designed to work with frequencies up to 1 MHz and offer excellent feedback on signal which is essential for proper operation. These transistors have an excellent performance to noise ratio, making them suitable for use in a wide range of switching applications.

The RN1107ACT(TPL3) transistors are versatile and offer a number of unique advantages. Their low on-resistance allows for increased power efficiency and reduced losses during the switching process. Additionally, the versatile range of operating temperature and voltage ranges makes them suitable for a broad range of applications. The excellent feedback on signal also makes them highly reliable, which is essential for high-frequency switching applications.

In conclusion, the RN1107ACT (TPL3) is part of a range of single, pre-biased, Bipolar Transistors (BJT). They are perfect for fast switching applications due to their low on-resistance, variable resistor and their fast turn-on and turn-off times. The transistors are noted for their excellent performance over extended temperature and voltage ranges and their ability to provide excellent feedback on signal and turn-off times. These transistors offer a number of advantages, including increased power efficiency and reduced losses during the switching process.

The specific data is subject to PDF, and the above content is for reference

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