RN1108ACT(TPL3) Allicdata Electronics

RN1108ACT(TPL3) Discrete Semiconductor Products

Allicdata Part #:

RN1108ACT(TPL3)TR-ND

Manufacturer Part#:

RN1108ACT(TPL3)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.1W CST3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1108ACT(TPL3) datasheetRN1108ACT(TPL3) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Description

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The RN1108ACT (TPL3) is an example of a single, pre-biased bipolar junction transistor (BJT). It is designed to be used in a wide range of applications, including test and measurement, medical, consumer, automotive, communications, and computing. The device is offered in a low-profile, plastic surface-mount package and can be used in surface-mount board assemblies.

The RN1108ACT (TPL3) is based on the NPN topology, and has an insulation layer between the emitter and collector. This insulation layer reduces the need for insulation between the device and the substrate, as it isolates the device from the substrate. It also reduces the device’s thermal resistance, making it well-suited for high-speed applications.

The physical parameters of the device include a voltage rating of -40V, collector current of 12A, base current of 5mA, and collector-emitter saturation voltage of 0.9V. Its operating temperature ranges from -65 to 150 degrees Celsius. The device is manufactured using a manufacturing process that utilizes semiconductor-level integration, resulting in a smaller physical size and lower power consumption.

The working principle of the RN1108ACT (TPL3) is based on the same principles as all other BJTs. It has three terminals, the emitter, base, and collector. The BJT is a current-controlled device, meaning that the current flowing through the base controls the current flowing through the other two terminals. The device works by using a small current applied at the base terminal to control a larger current through the device from the collector to the emitter. This base current raises the voltage across the two terminals, which in turn reduces the resistance to allow the current to flow.

The RN1108ACT (TPL3) has a wide range of applications and can be used in a variety of test and measurement and consumer electronics devices. As mentioned, its insulation layer reduces the need for insulation between the device and the substrate, making it ideal for use in high-speed applications. The device can also be used in medical applications, as it has a low thermal resistance and offers high performance. It can also be used in automotive applications, as it has a wide operating temperature range of -65 to 150 degrees Celsius. In addition, the device can be used in communications and computing applications, as it offers high switching performance and low power consumption.

In conclusion, the RN1108ACT (TPL3) is a single, pre-biased bipolar junction transistor (BJT). It has an insulation layer between the emitter and collector, reducing the need for insulation between the device and the substrate. The device also has a wide range of applications, including automotive, test and measurement, and medical, as it offers high switching performance, low power consumption, and a wide operating temperature range.

The specific data is subject to PDF, and the above content is for reference

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