RN2314(TE85L,F)

Resistor - Emitter Base (R2):	10 kOhms
Base Part Number:	RN231*
Supplier Device Package:	USM
Package / Case:	SC-70, SOT-323
Mounting Type:	Surface Mount
Power - Max:	100mW
Frequency - Transition:	200MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 10mA, 5V
Series:	--
Resistor - Base (R1):	1 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Transistors can be classified in three-terminal devices, namely BJTs or Bipolar Junction Transistors, MOSFETs or Metal Oxide Semiconductor Field Effect Transistors, and IGBTs or Insulated Gate Bipolar Transistors. In this article, we will be focusing on kind of BJTs that were designed for pre-biased applications. The RN2314 (TE85L, F) is a pre-biased, single BJT from Renesas Electronics Corporation. The RN2314 is well-suited for applications such as DC/DC converters, motor control, load switches and gate drive circuits.The RN2314 is a NPN device with a collector-emitter voltage rating of 65V, an emitter-base voltage rating of 6V and an IC rating of 0.4A. Its turn-on time is 350ns and its turn-off time is 100ns. It has a built-in emitter/base resistor, a low saturation voltage, and a high speed switching capability. The RN2314 also has an optimized layout design which reduces the parasitic components and improves the circuit performance.The working principle of the RN2314 is that when a positive voltage is applied to its base terminal, it produces a large current gain, which is specified in the datasheet. The BJT is biased to the point where the current through the emitter is much larger than the current through the collector. This voltage drop across the base-emitter junction provides a phase lag which boosts the current gain. This result is a large output current in proportion to the base current. The larger the base current, the larger the output current.The RN2314 can be used in a variety of applications due to its fast switching capabilities, low saturation voltage, and efficient operation. It can be used in load switches, motor control, gate drive, and power converter circuits. Load switches are circuits that are used to control the current flow through a load and are typically used in power management systems. The RN2314 can be used to control the current flow and to prevent overloading of the load by providing a switch to toggle the current flow on and off.In motor control, the RN2314 can be used to control the speed and position of the motor. By applying a small base current, the collector current is boosted, which in turn can be used to control the motor speed or position. The RN2314 can also be used in gate drive circuits. A gate drive is a circuit that provides a gate signal to an electrical device such as a MOSFET or IGBT. The RN2314 can be used to provide a high-speed switching signal to drive an IGBT or MOSFET. This, in turn, enables the circuits to operate at high frequencies with less power loss. Finally, the RN2314 can be used in power converter circuits. These circuits convert one form of energy, such as alternating current (AC) to direct current (DC), or DC to AC. TheRN2314 can be used to help reduce the size of the power converter circuit by providing switching signals with low power consumption and low propagation delays.In conclusion, the RN2314 is a pre-biased, single BJT that is well-suited for applications such as DC/DC converters, motor control, load switches and gate drive circuits. Its built-in emitter/base resistor and low saturation voltage enable it to provide fast switching signals, which in turn helps reduce the size of the circuit by providing low power consumption and low propagation delays. It can be used in a wide variety of applications, making it an invaluable component for a number of circuit designs.

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