Allicdata Part #: | RN2308(TE85LF)TR-ND |
Manufacturer Part#: |
RN2308(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS PNP 0.1W USM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | RN2308(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Base Part Number: | RN230* |
Supplier Device Package: | USM |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 100mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Today, the RN2308(TE85L,F) bipolar junction transistor (BJT) is one of the most popular transistors used in the electronics industry. This type of transistor is classified as single, pre-biased and is used in a variety of applications.This article will discuss the application fields and working principle of the RN2308(TE85L,F) BJT.
The Application Fields of the RN2308(TE85L,F)
The RN2308(TE85L,F) BJT can be found in numerous applications. It is used in audio amplifiers and as an input-output signal buffer. It is also used in power conditioning and switching configurations, which can help manage energy more efficiently. It is also used in voltage regulators and current amplifiers. In addition, the transistor is often used in logic systems, where the input signal acts as a switch to determine the output signal.
The wide application field of the RN2308(TE85L,F) is due to its features, such as low voltage drop and low noise rate. It has a high power rating and is able to operate at high frequencies. Furthermore, the RN2308(TE85L,F) possesses excellent temperature stability, which makes it ideal for use in harsh environments.
The Working Principles of the RN2308(TE85L,F) BJT
The RN2308(TE85L,F) BJT is a three-layer semiconductor material with two P-type materials sandwiching an N-type material. The two P-type materials are known as the emitter region and the collector region. The N-type material, on the other hand, is the base region.
When the transistor is operating in the active region, the base-emitter current is about one-tenth of the collector current. Since the base-emitter junction is forward biased, the current flow increases, thereby activating the collector-emitter junction. This turns on the transistor and allows the current to flow from the collector to the emitter.
Moreover, the RN2308(TE85L,F) BJT can operate in the saturation region. In this region, the collector-emitter current is at its maximum. This causes a low resistance to be created between the collector and the emitter and the transistor is said to be saturated.
Conclusion
In conclusion, the RN2308(TE85L,F) BJT is widely used in the electronic industry due to its features, such as low voltage drop and low noise rate. The transistor\'s working principles involve the base-emitter junction being forward biased, thus activating the collector-emitter junction. This allows the current to flow from the collector to the emitter. Moreover, the transistor can also operate in the saturation region, which causes a low resistance between the collector and the emitter.
The specific data is subject to PDF, and the above content is for reference
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