RN2318(TE85L,F) Discrete Semiconductor Products

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Bipolar junction transistors (BJTs) are the most commonly used type of transistors and are widely used in switching and amplification applications. The RN2318(TE85L,F) is a single, pre-biassed BJT with a wide range of applications. This article will discuss its application field, types, working principle and specifications.

Application Field

The RN2318(TE85L,F) has a wide range of applications, including but not limited to power switching, general purpose amplifiers, high side switching, linear amplifiers, and low noise amplifier applications. It is suitable for use in consumer electronics such as TVs, DVD players and satellite receivers as well as communication products and industrial electronics applications.

Types of RN2318(TE85L,F)

There are two types of RN2318(TE85L,F) transistors, PNP and NPN. The PNP type is a three-terminal device that requires a positive bias to the collector while the NPN type requires a negative bias to the collector. The polarity of the collector bias must match the type of RN2318(TE85L,F) used.

Working Principle

The basic principles of operation of the RN2318(TE85L,F) are similar to other BJTs. When the base-emitter junction is forward biased, current starts flowing through the transistor. This in turn controls the current flow between the collector and the emitter. The amount of current that can flow from the collector to the emitter is determined by the current going through the base. This current gain is known as the current gain of the transistor.

Specifications

The RN2318(TE85L,F) has a high DC current gain, with typical values ranging from 500 to 1000. The transistor can handle up to 0.5 amperes of collector current and has a maximum voltage of 200 volts. The power dissipation at room temperature is typically 0.8 watts. The RN2318(TE85L,F) also has a low base-emitter saturation voltage of 0.65V, which makes it suitable for low voltage applications. It is also suitable for operation up to 200 MHz.

In summary, the RN2318(TE85L,F) is a single pre-biassed Bipolar Junction Transistor (BJT) that is widely used in consumer electronics, communication products and industrial electronics applications. It has a wide current gain range and a low base-emitter saturation voltage. Its power dissipation and frequency range make it suitable for a variety of applications.

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