RN2309(TE85L,F) Discrete Semiconductor Products

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RN2309(TE85L,F) Application Field and Working Principle

Transistors – Bipolar (BJT) – Single, Pre-Biased

Bipolar Junction Transistors (BJTs) are commonly used in pre-biased applications, since they offer many advantages. BJTs provide a wide range of operating and thermal characteristics, including high current gain, low noise, and high speed operation.

The RN2309 (TE85L,F) is a miniature size low frequency bipolar junction transistor (BJT) with advanced and reliable technology. It is designed for a wide range of applications such as light duty power supplies, analog amplifying circuits, switching applications and ultra low-power audio and radio-frequency amplifying circuits that require a low-noise, linearly accessible performance.

The RN2309 features a double emitter structure and high voltage up to 65V collector-to-base voltage. The junctions of the device have exquisite thermal resistance and a guaranteed high reliability in long-term and high frequency operation.

The basic principle of operation of the RN2309 (TE85L,F) is similar to that of any other BJT. The device has three regions of semiconductor material separated by two PN junctions. The three regions are the base, collector, and emitter. The base region is narrow, whereas the other two regions are wider. This asymmetrical structure produces an electrical field across the PN junctions that allows current in the form of electrons to move from the emitter to the collector.

When a forward voltage is applied to the base-emitter junction, it creates an electric field that draws electrons from the emitter through the base and into the collector, forming a collector current (known as the base current). This process is the basic operating principle of a BJT.

The RN2309 (TE85L,F) is optimized for low-noise, power supply, control, and receiver applications through use of an exclusive SiliconoxIDE FET enclosure. This exclusive feature guarantees superior manufacturability, enhanced reliability and better performance than alternative BJTs. In addition, the device features an NPN topology with low capacitance and high current capability, making it suitable for high-frequency applications. On-chip reverse polarity protection (RPP) and electrostatic discharge protection (ESD) circuitry help to ensure that the device operates in a wide range of operating conditions and environments.

The RN2309 (TE85L,F) can be used in pre-biased applications, where the base-emitter junction is biased close to its conduction point by means of a voltage source. This biases the top PN junction at some near-ideal operating point, reducing the possibility of thermal runaway and overload damage. Pre-biasing the device further improves its performance and stability.

In conclusion, the RN2309 (TE85L,F) is an advanced, reliable, low-noise, low-power, high-frequency bipolar junction transistor (BJT) with superior manufacturability, enhanced reliability and better performance than alternative BJTs, making it suitable for a wide range of pre-biased applications.

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