Allicdata Part #: | RN2310LFTR-ND |
Manufacturer Part#: |
RN2310,LF |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS PNP 0.1W USM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | RN2310,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02024 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
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A RN2310 is a pre-biased single bipolar junction transistor (BJT). Its application field is in high-speed switching and power amplification. With its high current gain, small size, and low cost, the RN2310 is an ideal solution for a variety of consumer, industrial and automotive products. This article will delve into the working principle of the RN2310 and its application field.
A BJT is a semiconductor device composed of three different layers of a semiconductor material. In an NPN-type BJT, there is an emitter, base and collector. Briefly, the emitter layer is positively charged majority-carrier region, while the base layer is a lightly doped p-type region. This forms a PN junction between the emitter and the base. The collector layer is a heavily doped n-type region, and forms an additional PN junction with the emitter and the base. The principal working principle of a BJT is that the current flowing through the emitter-base junction due to the bias voltage applied to it is amplified proportionally with the current gain β.
RN2310 is a pre-biased single BJT that can be used in a wide range of applications including high-speed switching, power amplifiers, and signal conditioning. The primary benefit of using this type of BJT is that it enables an efficient and rapid response of the device to input signals. The operating temperature range of the RN2310 is from -40°C to +85°C, which allows for efficient operation in various industrial, automotive, and consumer-grade applications. Its maximum collector current is 600mA, and it can support a maximum power dissipation of 920 mW at room temperature. Additionally, the small size of the RN2310 makes it suitable for circuit designs with limited space.
In terms of its working principle, the RN2310 is pre-biased during operation. This means that a constant but very small bias current (IB) is applied to the base while the device is on. As a result, the emitter junction voltage (VBE) remains constant at around 0.7V. When an input signal is applied, in the form of a voltage or current, this signal is amplified by the current gain β of the device. The output current is also proportional to the input current. Therefore, when the base current reaches a specific level, the collector current also reaches a certain saturation level, depending on the amplification factor.
In conclusion, the RN2310 is a single BJT that is pre-biased during operation. It has a wide range of application areas, including high-speed switching, power amplifiers and signal conditioning. The operating temperature range from -40°C to +85°C allows for efficient operation in various industrial, automotive, and consumer-grade applications. The working principle of the RN2310 is based on a current gain β which amplifies the input signals and generates an output signal.
The specific data is subject to PDF, and the above content is for reference
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