RN2310,LF Allicdata Electronics
Allicdata Part #:

RN2310LFTR-ND

Manufacturer Part#:

RN2310,LF

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS PNP 0.1W USM
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2310,LF datasheetRN2310,LF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02024
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A RN2310 is a pre-biased single bipolar junction transistor (BJT). Its application field is in high-speed switching and power amplification. With its high current gain, small size, and low cost, the RN2310 is an ideal solution for a variety of consumer, industrial and automotive products. This article will delve into the working principle of the RN2310 and its application field.

A BJT is a semiconductor device composed of three different layers of a semiconductor material. In an NPN-type BJT, there is an emitter, base and collector. Briefly, the emitter layer is positively charged majority-carrier region, while the base layer is a lightly doped p-type region. This forms a PN junction between the emitter and the base. The collector layer is a heavily doped n-type region, and forms an additional PN junction with the emitter and the base. The principal working principle of a BJT is that the current flowing through the emitter-base junction due to the bias voltage applied to it is amplified proportionally with the current gain β.

RN2310 is a pre-biased single BJT that can be used in a wide range of applications including high-speed switching, power amplifiers, and signal conditioning. The primary benefit of using this type of BJT is that it enables an efficient and rapid response of the device to input signals. The operating temperature range of the RN2310 is from -40°C to +85°C, which allows for efficient operation in various industrial, automotive, and consumer-grade applications. Its maximum collector current is 600mA, and it can support a maximum power dissipation of 920 mW at room temperature. Additionally, the small size of the RN2310 makes it suitable for circuit designs with limited space.

In terms of its working principle, the RN2310 is pre-biased during operation. This means that a constant but very small bias current (IB) is applied to the base while the device is on. As a result, the emitter junction voltage (VBE) remains constant at around 0.7V. When an input signal is applied, in the form of a voltage or current, this signal is amplified by the current gain β of the device. The output current is also proportional to the input current. Therefore, when the base current reaches a specific level, the collector current also reaches a certain saturation level, depending on the amplification factor.

In conclusion, the RN2310 is a single BJT that is pre-biased during operation. It has a wide range of application areas, including high-speed switching, power amplifiers and signal conditioning. The operating temperature range from -40°C to +85°C allows for efficient operation in various industrial, automotive, and consumer-grade applications. The working principle of the RN2310 is based on a current gain β which amplifies the input signals and generates an output signal.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RN23" Included word is 29
Part Number Manufacturer Price Quantity Description
RN2301,LF Toshiba Semi... 0.13 $ 3684 TRANS PREBIAS PNP 0.1W US...
RN2313(TE85L,F) Toshiba Semi... 0.04 $ 3000 TRANS PREBIAS PNP 0.1W US...
RN2315TE85LF Toshiba Semi... 0.04 $ 3000 TRANS PREBIAS PNP 0.1W SC...
RN2312(TE85L,F) Toshiba Semi... 0.04 $ 3000 TRANS PREBIAS PNP 0.1W US...
RN2314(TE85L,F) Toshiba Semi... 0.04 $ 1000 TRANS PREBIAS PNP 0.1W US...
RN2317(TE85L,F) Toshiba Semi... 0.04 $ 1000 TRANS PREBIAS PNP 0.1W US...
RN232-0.6-02 Schaffner EM... 0.0 $ 1000 COMMON MODE CHOKE 47MH 60...
RN232-1.6-02 Schaffner EM... 0.0 $ 1000 COMMON MODE CHOKE 10MH 1....
RN232-1-02 Schaffner EM... 0.0 $ 1000 COMMON MODE CHOKE 18MH 1A...
RN232-2.5-02 Schaffner EM... 0.0 $ 1000 COMMON MODE CHOKE 5.6MH 2...
RN232-4-02 Schaffner EM... 0.0 $ 1000 COMMON MODE CHOKE 3.3MH 4...
RN232-0.6-02-47M Schaffner EM... 1.95 $ 300 CMC 47MH 600MA 2LN TH47mH...
RN232-1.6-02-10M Schaffner EM... 1.95 $ 300 CMC 10MH 1.6A 2LN TH10mH ...
RN232-2.5-02-5M6 Schaffner EM... 1.95 $ 284 CMC 5.6MH 2.5A 2LN TH5.6m...
RN232-1-02-18M Schaffner EM... 1.95 $ 275 CMC 18MH 1A 2LN TH18mH @ ...
RN232-4-02-3M3 Schaffner EM... 1.99 $ 300 CMC 3.3MH 4A 2LN TH3.3mH ...
RN2310,LF Toshiba Semi... 0.02 $ 1000 TRANS PREBIAS PNP 0.1W US...
RN2306,LF Toshiba Semi... 0.02 $ 1000 TRANS PREBIAS PNP 0.1W US...
RN2302,LF Toshiba Semi... 0.03 $ 1000 X34 PB-F USM TRANSISTOR P...
RN2310(TE85L,F) Toshiba Semi... 0.04 $ 1000 TRANS PREBIAS PNP 0.1W US...
RN2304(TE85L,F) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.1W US...
RN2308(TE85L,F) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.1W US...
RN2309(TE85L,F) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.1W US...
RN2311(TE85L,F) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.1W US...
RN2303(TE85L,F) Toshiba Semi... 0.21 $ 2417 TRANS PREBIAS PNP 0.1W US...
RN2307(TE85L,F) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.1W US...
RN2318(TE85L,F) Toshiba Semi... 0.04 $ 1000 TRANS PREBIAS PNP 0.1W US...
RN2305(TE85L,F) Toshiba Semi... 0.21 $ 207 TRANS PREBIAS PNP 0.1W US...
SFH 303 FA-3/4 RN23C OSRAM Opto S... 0.0 $ 1000 PHOTOTRANS T1 3/4 5MM NPN...
Latest Products
PDTD113EK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD113EK,115 Allicdata Electronics
PDTC144WS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTC144WS,126 Allicdata Electronics
PDTD123YS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123YS,126 Allicdata Electronics
PDTD123TS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123TS,126 Allicdata Electronics
PDTD123TK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD123TK,115 Allicdata Electronics
PDTD123ES,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123ES,126 Allicdata Electronics