RN2317(TE85L,F)

Resistor - Emitter Base (R2):	4.7 kOhms
Base Part Number:	RN231*
Supplier Device Package:	USM
Package / Case:	SC-70, SOT-323
Mounting Type:	Surface Mount
Power - Max:	100mW
Frequency - Transition:	200MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 10mA, 5V
Series:	--
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

The RN2317 (TE85L, F) is a single pre-biased bipolar junction transistor (BJT) designed for a wide range of applications. In general, a BJT is a three-terminal device that acts as an amplifier or switch and is composed of three semiconductor layers (collector, base, and emitter). The RN2317 (TE85L, F) is highly versatile and is applied in power circuits for high power demand, as well as in in low-level signal applications. The RN2317 (TE85L,F) is designed with a number of important features, such as a built-in resistor to pre-bias the base/emitter junction, a collector side zener diode to protect against voltage transients, and a heat-sinkable case.

Application Field

The RN2317 (TE85L, F) is well-suited for a variety of applications, such as high current power amplifier designs, pulse-width-modulated (PWM) amplifier designs, motor controls, and load switch designs. The pre-biased BJT configuration and built in zener diode make it ideal for power amplifier applications where the supply voltage need to be regulated according to the current consumed. The device also provides good protection from over-voltage transients.In addition, the RN2317 (TE85L, F) is also suitable for use as a load switch in low power designs, as it has a high switching speed and is capable of dissipating large amounts of power in a short time. The device also provides good control over current when used in PWM amplifier applications.

Working Principle

The RN2317 (TE85L,F) is a three-terminal Bipolar Junction Transistor (BJT). It consists of a collector, a base, and an emitter. A small forward bias voltage is applied to the emitter/base junctions to turn the device on. This is caused by the built-in resistor that is used to pre-bias the junction. When the device is on, current flows from the base to the collector, and the collector voltage increases.The zener diode on the collector side of the device protects it against voltage transients. This works by allowing the device to shut down when an over-voltage condition occurs. The heat-sinkable case of the device dissipates the heat generated by the inner components.

Conclusion

The RN2317 (TE85L,F) is a single pre-biased Bipolar Junction Transistor designed for a wide range of applications. The device is highly versatile and is suitable for high current power amplifier, PWM amplifier and load switch designs. It has a built-in resistor for pre-biasing the base/emitter junction, a collector side zener diode for protection against voltage transients, and a heat-sinkable case. The device is designed to operate at high temperatures and is capable of dissipating large amounts of power in a short time. This makes the RN2317 (TE85L,F) an ideal device for a number of applications.

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