RN2306,LF Allicdata Electronics

RN2306,LF Discrete Semiconductor Products

Allicdata Part #:

RN2306LFTR-ND

Manufacturer Part#:

RN2306,LF

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS PNP 0.1W USM
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2306,LF datasheetRN2306,LF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02193
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM
Description

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Modern technology is drastically changing the way we live in today\'s world. With the development of electronic components and technologies, the way of doing things also changes rapidly. For example, the transistor, which is widely used in electronic circuits, has undergone a major revolution from its beginning. In this article, we will take a closer look at the RN2306,LF pre-biased single bipolar transistor, its application fields and working principles.

RN2306,LF is a pre-biased single bipolar transistor. It is composed of two bipolar transistors connected in series, with the collector of one connected to the emitter of the other, and its collector-emitter breakdown voltage is around 600V. Moreover, its power dissipation of 150mW at 25°C makes this transistor suitable for use in applications where low power dissipation is desired. It has a small package size (SOT89) and is suitable for applications where space is limited.

RN2306,LF is a commonly used transistor in the field of power switching. For example, in power converters and voltage regulators, it is used to switch the current on and off in order to regulate the output voltage. This transistor is also suitable for applications where it is necessary to switch loads with high efficiency and low loss, such as in DC motors, DC-DC converters, solar power inverters and drives for home appliances. Furthermore, RN2306,LF can also be used in automotive lighting systems and in the control of LED lighting, making it an indispensable component in these applications.

In terms of working principle, the RN2306,LF is an NPN bipolar transistor. Its operation relies on the movement of electrons within the three-layer semiconductor material, determined by the external voltage applied to its base and emitter. In NPN transistors, the emitter is made of a lightly doped material, which creates a region where electrons can flow freely. The collector is made of a heavily doped material, meaning that a much larger current can flow in the collector than in the emitter, so the electrons are pulled toward it. This action is increased by the base current, which provides additional charge carriers to move into the collector. Finally, when the collector voltage is large enough, the electrons flow freely from the emitter to the collector. This process is regulated by the external voltage applied to the base and emitter, so that the current flowing from the collector to the emitter can be controlled accordingly.

In conclusion, the RN2306,LF pre-biased single bipolar transistor is an indispensable component in various types of electronic circuits. Its small footprint and low power dissipation make it ideal for applications where space and power consumption are a concern. Moreover, its working principle and application fields make it a very convenient and reliable component in power switching, drives for home appliances, lighting systems and DC-DC converters.

The specific data is subject to PDF, and the above content is for reference

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