Allicdata Part #: | RN2310(TE85LF)TR-ND |
Manufacturer Part#: |
RN2310(TE85L,F) |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS PNP 0.1W USM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | RN2310(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03043 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
Base Part Number: | RN231* |
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Transistors - Bipolar (BJT) - Single, Pre-Biased
The RN2310(TE85L,F) is a single pre-biased bipolar junction transistor (BJT) intended for use in the home and automotive markets. It is available in a variety of package types to suit any application. The RN2310 is designed to offer excellent current gain and low noise operation, making it ideal for applications where high performance and reliability are needed. The device also features built-in protection against overvoltage, and comes in a wide range of package sizes to meet various application requirements.
The RN2310(TE85L,F) can be used in a wide range of applications, from signal amplification in audio frequency applications to providing reliable switching and high-frequency signal amplification in automotive applications. In automotive applications, the device is used for ABS control systems, power supplies, and power converters, as well as in traction control systems and vehicle stability control systems. In audio applications, it is used to amplify signal levels in sound systems and speaker systems.
Working Principle of the RN2310(TE85L,F)
The RN2310(TE85L,F) is a type of BJT that is pre-biased. This means that the collector-emitter voltage is already established when the device is powered on. The device operates by applying a voltage to the base and allowing the current to flow through the junction between the collector and the emitter of the device. This current then amplifies the signal being applied to the base. As the signal current passes through the junction between the collector and the emitter, the voltage on the collector-emitter of the device changes according to the signal being applied to the base.
The RN2310(TE85L,F) is designed to provide excellent current gain and low noise characteristics. This is done by designing the device to have a low reverse saturation voltage, which means that the transistor allows more current to flow when the signal is applied to the base, thus allowing the device to amplify the signal more efficiently. The low noise characteristic is due to the large base-to-emitter junction, which ensures that no noise is generated when the signal is amplified.
Overall, the RN2310(TE85L,F) is an excellent choice for reliable amplification of signals in audio and automotive applications. The device’s convenient size and pre-biased design make it easy to use in most applications. The device offers excellent current gain and low noise characteristics, making it an excellent choice for applications where high levels of performance and reliability are needed.
The specific data is subject to PDF, and the above content is for reference
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