RN2305(TE85L,F) Allicdata Electronics
Allicdata Part #:

RN2305(TE85LF)CT-ND

Manufacturer Part#:

RN2305(TE85L,F)

Price: $ 0.21
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS PNP 0.1W USM
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2305(TE85L,F) datasheetRN2305(TE85L,F) Datasheet/PDF
Quantity: 207
1 +: $ 0.18900
10 +: $ 0.17010
25 +: $ 0.12272
100 +: $ 0.09538
Stock 207Can Ship Immediately
$ 0.21
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Discontinued at Digi-Key
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM
Description

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The RN2305 (TE85L,F) is a single, pre-biased, bipolar transistor device, used for a wide variety of applications including automotive, communications and consumer electronics. This device is made up of two NPN transistors, each with a polyethylene base cap, mounted in a small surface mount package. This device is capable of providing reliable and efficient operation, while also providing protection from thermal or electrical malfunction.

The RN2305 is designed to be used in a wide range of applications, due to its robust design and excellent performance. It is typically used in audio amplifiers, battery-operated applications, light emitting diode (LED) applications, memory circuits, and prefabricated linear ICs. These devices have been developed to provide a high level of accuracy, low operating power consumption and no external components are required.

The RN2305 works on the principle of two NPN transistors, each with a polyethylene base cap. These two transistors are connected in a complementary way in order to amplify signals. The base of the device is connected to an appropriate base bias and the collector is connected to the required input voltage. The current passing through the device from the collector to the emitter is controlled by the base current. This current is regulated by the internal biasing structures and is adjusted based on the current passing through the collector. The device operates with a fixed bias voltage and the current passing through the device is equal to the collector current.

The RN2305 is designed to provide low operating power consumption and is capable of providing high levels of accuracy. Additionally, it is able to operate at high temperatures and provides exceptional performance even under harsh conditions. This device also offers protection from thermal or electrical malfunction. This device will help to prevent any damages to the circuits during runtime and can help to improve efficiency and reliability.

The RN2305 is an ideal device for use in a wide range of applications. Its robust design and excellent performance make it suitable for automotive, communications and consumer electronics applications. Furthermore, its characteristics allow for easy integration into existing systems. This makes the RN2305 an ideal solution for many applications, including audio amplifiers, battery-operated applications, light emitting diode (LED) applications, memory circuits and prefabricated linear ICs.

The specific data is subject to PDF, and the above content is for reference

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