RN262CST2R

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The RN262CST2R is a diode used in RF applications. It is designed to provide efficient, stable, and accurate performance in an extremely wide range of operational frequencies. This diode is ideal for receiver, transmitter, and frequency multipliers, as well as high-frequency decoupling and optical receiver applications.

The RN262CST2R is a dual junction, symmetrical Schottky technology, packaged in a hermetic ceramic package. This package offers excellent RF performance and low parasitic capacitance, while also providing superior high-frequency capability via its 50/400Ω stripline structure. The unique structure of the RN262CST2R also supports an extremely wide operating frequency range, making it suitable for applications ranging from ~10 to 8,000 MHz.

The RN262CST2R diode features an I-V characteristic that provides a linear and predictable output with minimal noise and distortion, ensuring optimum performance and accuracy in all applications where it is used. This diode is also highly immune to temperature variations, and has very low leakage current even at extreme temperatures. The RN262CST2R is also very stable and offers long-term reliability and endurance in dynamic operating environments.

The RN262CST2R offers a low junction capacitance of 6 pF and low junction impedance of 1ohm at 25MHz in a strong hermetic package. This diode is designed to meet or exceed MIL-STD-883 quality and reliability standards and carries a 5-year product warranty. It is available in a wide variety of package sizes, including: 2.0 x 2.0 mm, 2.54 x 2.54 mm, 3.2 x 3.2 mm, and 4.5 x 4.5 mm.

The working principle of the RN262CST2R involves the application of reverse bias voltage across the diode junction. This reverse bias voltage creates an electric field which causes a low current to flow through the diode. This low current dissipates very quickly, thus resulting in a very low forward voltage drop across the diode, which essentially turns the diode off. When a high-frequency signal is applied to the diode, the electric field creates a hole-electron pair in the junction, which creates a “depletion region” that acts as a capacitor and blocks the current. The capacitance of this depletion region determines the frequency response of the diode, as well as its dynamic range.

In summary, the RN262CST2R diode is an excellent choice for a wide variety of RF applications. Its design and construction provide excellent high-frequency performance, stability, and reliability in demanding environments. The RN262CST2R package provides excellent RF performance, while its low junction capacitance and impedance provide superior dynamic range. Furthermore, its superior immunity to temperature variations and long-term reliability ensures optimum performance in all applications.

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