RN2603(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN2603(TE85LF)TR-ND |
Manufacturer Part#: |
RN2603(TE85L,F) |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.3W SM6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2603(TE85L,F) Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.05557 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
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The RN2603 (TE85L, F) contains 4 independent NPN silicon bipolar transistors in a single package, which makes it ideal for applications and processes that require multiple transistors. It is a member of the family of pre-biased transistors, which are used to amplify signals or reduce power in a circuit. The RN2603 (TE85L, F) is mainly used in low voltage applications and can be used in a wide variety of applications, including motor control, signal processing, sound amplification, and sensor applications.
The RN2603 (TE85L, F) features a voltage pre-biased emitter in each transistor to help improve efficiency, whiles its standard current gain increases stability and helps reduce noise. The package also features a thermal pad to optimize heat dissipation. The RN2603 (TE85L, F) is available in a standard TO-99 package and has a low voltage operation and wide supply voltage range.
The RN2603 (TE85L, F) features a working principle centered on the use of a bipolar transistor. A bipolar transistor is composed of two p-n junctions, with the collector and emitter of the device serving as the two junctions. In the RN2603 (TE85L, F) device, voltage is applied to the base and the collector, causing current to flow from the emitter. This current flow is then amplified and turned into an output signal. By controlling the amount of current that flows through the device, it is possible to achieve a variety of desired output signals.
The RN2603 (TE85L, F) also has integrated protection circuitry to guard against short circuits, thermal shutdown and overcurrent. With its large current allowing capability, this device is especially suitable for motor control, power amplifiers and other applications that require higher current capabilities. This is important as it prevents the device from burning out due to overloads and allows the device to maintain its ability to deliver high current levels.
The RN2603 (TE85L, F) is designed to also be highly rugged and reliable in various operating environments, thus making it a reliable choice for many high-performance applications. Its integrated protection circuitry also ensures its performance in a wide range of operating environments, while its pre-biased emitter ensures high-efficiency operation. Additionally, its package also features a thermal pad, which optimizes heat dissipation, providing even greater reliability and stability.
The RN2603 (TE85L, F) is an ideal choice for a variety of applications and processes that call for multiple transistors to be used. It has a wide voltage supply range and excellent current gain, making it an ideal choice for low voltage applications. It also features integrated protection circuitry, a pre-biased emitter, and a thermal pad to optimize heat dissipation, ensuring maximum reliability and performance in a wide variety of operating environments.
The specific data is subject to PDF, and the above content is for reference
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