RN2601(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN2601(TE85LF)TR-ND |
Manufacturer Part#: |
RN2601(TE85L,F) |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.3W SM6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2601(TE85L,F) Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.03195 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
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The RN2601(TE85L,F) is a type of pre-biased bipolar transistor array, and is ideal for applications requiring medium power, low to medium speed switching, and high noise immunity. This type of device employs an integrated circuitry that provides a high level of functionality in a single package.
The RN2601 device has two different types of devices: one-transistor-based arrays and two-transistor-based arrays. These devices feature a common collector configuration with pre-biased emitters and collectors. The one-transistor-based arrays usually have four series-connected transistors, while the two-transistor-based arrays typically feature six or eight transistors with various combinations of transistors. The transistors in each type of array are typically arranged in parallel.
The RN2601 is designed for use as a low power switching function. The device is ideal for applications requiring medium power and low to medium speed switching and high noise immunity, such as in radio receivers, sound and video equipment, and audio amplifiers. The device also offers a low thermal resistance, low power dissipation, and high gain characteristics.
Given its advantages such as simple construction, low cost, and high reliability, there are numerous applications that the RN2601 is suitable for. This type of device is often used in motor control, logic level circuits, audio signal processing, digital video processing, and audio modulation circuits. Because of its low thermal resistance, low power dissipation, and high gain characteristics, the RN2601 can be used in high voltage and high temperature applications as well.
The working principle of the RN2601 is quite simple. The device is designed to provide a very low resistance path between the emitters and collectors, while also providing isolation between the individual transistors. This allows it to quickly and accurately switch from one state to another. The device also features a pre-set bias voltage that is applied to the emitters, preventing them from saturating as well as providing protection for the device. This allows for a wide range of current levels to be handled and makes it suitable for a variety of applications.
The RN2601 is a popular choice for a wide range of applications due to its low cost, low thermal resistance, and superior performance. The device is often used in radio receivers, sound and video equipment, and audio amplifiers. It is also used in motor control, logic level circuits, audio signal processing, digital video processing, and audio modulation circuits. This type of pre-biased transistor array is ideal for applications requiring medium power and high noise immunity.
The specific data is subject to PDF, and the above content is for reference
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