RN2605(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN2605(TE85LF)TR-ND |
Manufacturer Part#: |
RN2605(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.3W SM6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2605(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
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The RN2605 (TE85L,F) is a three-stage bipolar transistor array that is designed to provide an effective amplification solution for a wide range of applications. The device has three transistors, each with its own independent bias supply, and provides a high level of isolation between each stage, ensuring reliable performance of the device in multiple stages. The RN2605 operates on a bias current of 2 mA per stage and has an operating temperature range of -40 °C to +85 °C. With a low power dissipation of 120 mW per stage, the RN2605 enables use in applications that require low power consumption. The device has a total supply voltage range of 5 V to 10 V, and its output can be used to control power-hungry devices such as motors, heaters and other devices. The RN2605 features high-speed switching speeds of up to 5 MHz and a low output impedance of 15 Ohm. The device is designed to operate in the switching mode and is a great choice for applications that require a high-speed operation without a large power dissipation. The device is fully integrated and requires no external components for operation. The RN2605 has a wide array of common-emitter configurations available, allowing for flexibility in its applications. These configurations can be used to build a wide range of analog circuits, such as voltage-controlled oscillators, phase-locked loops, precision amplifiers and voltage regulators. The RN2605 is also suitable for use in designs for power converters, power supply circuits, amplifier circuits and switching circuits. The working principle of the RN2605 is simple and straightforward. The device has three independent transistors with separate bias supplies. The base-emitter junction of each transistor is forward biased and then current flows through each transistor in turn. Depending on the configuration, the transistors will operate as an amplifier or an oscillator. The device can also be used as a pre-biased amplifier in which the bias currents are pre-determined and set before the device is activated. In summary, the RN2605 is a three-stage bipolar transistor array, designed to provide an effective amplification solution for a wide range of applications. The device is highly efficient, with a low power dissipation and high speed switching. With its wide array of common-emitter configurations available, it can be used for a variety of analog circuits, like voltage regulators, power converters and amplifier circuits. The device has a straightforward, simple working principle and requires no external components for operation.
The specific data is subject to PDF, and the above content is for reference
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