RN2608(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN2608(TE85LF)TR-ND |
Manufacturer Part#: |
RN2608(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.3W SM6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2608(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
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The RN2608 (TE85L, F) is a pre-biased, multi-mode array of transistors. It is a type of bi-polar junction transistor (BJT) that is used for applications requiring high-sensitivity and low power consumption. The RN2608 has a complex structure and can be used for a variety of purposes. This article will discuss the applications and working principle of the RN2608 array.
Applications
The RN2608 is a versatile transistor array and has a variety of applications. It is suitable for use in input stages of high-sensitivity receivers, especially in the microwave frequency bands, as well as for frequency multipliers. The RN2608 is also suitable for use in feedback circuits, with its low power consumption and high-sensitivity characteristics, as well as in applications requiring high-frequency oscillations and fast circuit switching. It is also often used in amplifiers, detectors, and switching circuits. In addition, it can be used in high-frequency radio communication and low-noise electro-mechanical transducers, due to its high-sensitivity and low-power operation.
Working Principle
The RN2608 is a pre-biased, bi-polar junction transistor (BJT) array. A BJT consists of three terminals; an emitter, collector and base. The base and collector of the RN2608 are connected to the same current source and will each hold a constant voltage. The emitter is connected in a common-emitter configuration and will receive the base current. The RN2608 is a fast-switching array, as the base and collector voltages remain constant and will not change if the emitter voltage changes. The RN2608 utilizes bipolar transistors to create gain, either in voltage or current, depending on the desired application. The current produced in the collector is greater than the current in the emitter, due to the amplification. This allows the RN2608 to generate gain or current levels higher than those coming from the input source.
The RN2608 also utilizes negative feedback, which is a circuit feature that stabilizes the array’s operation. The negative feedback will regulate the current between the emitter and collector, creating a stable state. This allows the RN2608 to operate consistently and accurately regardless of input current or output current fluctuations.
Conclusion
<The specific data is subject to PDF, and the above content is for reference
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