RN2602(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN2602(TE85LF)TR-ND |
Manufacturer Part#: |
RN2602(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.3W SM6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2602(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
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Transistors are an essential part of many electronic circuits. Bipolar junction transistors (BJTs) are a type of transistor that is constructed from three semiconductor regions connected together. Because of the way they are made, BJTs are capable of amplifying signals in both directions (positive and negative) and can be used to control the flow of current in a circuit. This makes them highly versatile and useful components for a variety of applications.
The RN2602(TE85L,F) is a type of pre-biased array that combines the features of two individual BJTs with a common base connection in order to provide a more efficient and convenient way to use transistor arrays. This type of array is designed to offer the performance characteristics of two BJT transistors in one single package, providing a larger current gain than what could be achieved with just a single BJT. This makes it a suitable choice for a wide range of applications, from audio amplifiers to power amplifiers.
The RN2602(TE85L,F) is capable of providing a wide range of current gains, from 40 to 300, with a minimum input gate current of 50 μA. The two transistors of the array are connected in a complementary way and their outputs can provide a load with up to 200 mA. The array is designed to deliver a high current gain with a wide dynamic range, making it suitable for a variety of audio applications.
The RN2602(TE85L,F) array also offers a wide range of voltage gains, ranging from 20 to 200 mV/V. This makes it a suitable choice for a variety of feedback configurations, from non-inverting amplifiers to inverting amplifiers. It is also suitable for a variety of applications ranging from signal amplification to power switching.
The RN2602(TE85L,F) array works on the same principle as a single BJT. The base of the transistor is the control element, where the base-emitter voltage is used to control the current flow. Depending on the voltage applied to the base, the emitter will release carriers (electrons or holes), which will flow through the collector and out to the load. This is how the RN2602(TE85L,F) amplifies signals.
In addition to the wide range of current gains and voltage gains, the RN2602(TE85L,F) array also offers a low noise figure, making it suitable for use in low-noise applications. The array also features an automatic shut off feature, which will protect the transistors from thermal overloads. This makes the RN2602(TE85L,F) array a highly reliable and durable component.
In summary, the RN2602(TE85L,F) array is a highly versatile and reliable pre-biased transistor array. With its wide range of current and voltage gains, low noise figure, and automatic shut off feature, it can be used for a wide range of applications, ranging from audio amplifiers to power switching. Its unique design makes it an invaluable component for any circuit design.
The specific data is subject to PDF, and the above content is for reference
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