RN2606(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN2606(TE85LF)TR-ND |
Manufacturer Part#: |
RN2606(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.3W SM6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2606(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
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The RN2606 (TE85L,F ) is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased, component from STMicroelectronics. It is also known as the “MOSFET array” and is frequently used in power and energy management applications. The RN2606 is comprised of two pre-biased N and P type MOSFETs which can control high voltages and high currents. The component is commonly used to control loads and to provide isolation for power circuits.
The RN2606 has a very wide range of applications, including low current switching, drive circuits, high current applications, circuit protection, and so on. This component can be used in solenoids, DC motor drivers, switching power supplies and amplifiers. This component is also ideal for controlling load currents and high voltages in a power circuit.
The RN2606 includes only two pins, making it a very simple component to use. This MOSFET array is powered by a single low-voltage supply, which reduces the overall power consumption of the system. The RN2606 also offers a fast turn-on, allowing it to respond quickly to changes in the load current or voltage. In addition, the RN2606 provides a high isolation voltage, ensuring that any leakage current is minimized.
The working principle of the RN2606 is relatively straightforward. It contains two distinct transistors, an N-type and a P-type MOSFET. When a voltage is applied across both transistors, the higher voltage transistor channel opens and current flows through the circuit. The lower voltage transistor channel remains closed and no current flows through it. By varying the voltage between the two transistors, the power delivered to the load can be controlled.
The RN2606 has a number of important characteristics that make it a popular choice for power and energy management applications. It has a low switching time, making it ideal for applications that need to respond quickly to changes in the load current or voltage. In addition, the RN2606 is a very low noise component, which is important for applications that require quiet operation. Finally, the RN2606 has a high isolation voltage, ensuring that the load is not exposed to any unwanted leakage currents.
In conclusion, the RN2606 is a powerful and versatile MOSFET array from STMicroelectronics. It is used to control loads and to provide isolation for power circuits. The RN2606 is simple to use and has a number of desirable characteristics, such as a low switching time, low noise, and high isolation voltage. As such, the RN2606 is a widely used component in power and energy management applications.
The specific data is subject to PDF, and the above content is for reference
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