RN2610(TE85L,F) Discrete Semiconductor Products |
|
Allicdata Part #: | RN2610(TE85LF)TR-ND |
Manufacturer Part#: |
RN2610(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.3W SM6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2610(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RN2610 (TE85L,F) is a small-signal, low-noise, 10-bipolar transistor array, pre-biased with pull-up resistors. It is a great tool for reducing the power output and improving the signal-to-noise ratio of any analog system. This product is designed for use in a wide range of applications, such as communications, instrumentation, autopilot and other control systems, and automotive electronics.
The RN2610 (TE85L,F) includes 10 transistors with an associated base and drain resistor network. The transistors are asymmetrically pre-biased, with a resistance from the base to the collector that is almost twice that of the drain to the collector. This resistive network effectively reduces the power output, resulting in less noise and improved signal-to-noise ratio. The resistive network is also designed to reduce thermal stress, allowing the device to operate at higher temperatures. Furthermore, the pre-biased design improves the stability of the device, providing increased reliability in harsh environments.
The RN2610 (TE85L,F) is optimized for use in low-power, low-noise bipolar amplifier applications. The pre-biased design ensures minimum base-to-drain voltage, providing improved amplifier operation. The device is also suitable for RF amplifier applications, thanks to its excellent thermal properties. Furthermore, the low-noise design ensures maximum signal-to-noise ratio, resulting in increased sensitivity and improved performance. Finally, the small size and low profile of the RN2610 (TE85L,F) make it suitable for a range of applications, including portable equipment.
The RN2610 (TE85L,F) provides superior performance in a wide range of applications. The low-noise design, pre-biased resistor network, and optimized design for bipolar amplifier applications make the device ideal for low-power, low-noise applications. Furthermore, the small size and low profile of the RN2610 (TE85L,F) make it suitable for use in portable equipment. Finally, the device\'s excellent thermal properties make it suitable for use in RF amplifier applications.
In conclusion, the RN2610 (TE85L,F) is a small-signal, low-noise, 10-bipolar transistor array, pre-biased with pull-up resistors. The device is optimized for use in low-power, low-noise bipolar amplifier applications, and is suitable for use in a range of other applications, such as communications, instrumentation, autopilot and other control systems, and automotive electronics. The pre-biased design enhances performance, while the small size and low profile make the device suitable for use in portable equipment. Finally, the superior thermal properties make the RN2610 (TE85L,F) suitable for use in RF amplifier applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RN262CST2R | ROHM Semicon... | 0.04 $ | 1000 | DIODE PIN HF SW 30V 100MA... |
RN262GT2R | ROHM Semicon... | 0.07 $ | 1000 | DIODE PIN HF SW 30V 100MA... |
RN2601(TE85L,F) | Toshiba Semi... | 0.04 $ | 3000 | TRANS 2PNP PREBIAS 0.3W S... |
RN2603(TE85L,F) | Toshiba Semi... | 0.06 $ | 3000 | TRANS 2PNP PREBIAS 0.3W S... |
RN2604(TE85L,F) | Toshiba Semi... | 0.06 $ | 3000 | TRANS 2PNP PREBIAS 0.3W S... |
RN2608(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.3W S... |
RN2610(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.3W S... |
RN2602(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.3W S... |
RN2605(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.3W S... |
RN2606(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.3W S... |
RN2607(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.3W S... |
TRANS NPN PREBIAS/NPN 6TSSOPPre-Biased B...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...